BFP 540 E6327 Infineon Technologies, BFP 540 E6327 Datasheet

BFP 540 E6327

Manufacturer Part Number

BFP 540 E6327

Description

TRANSISTOR RF NPN 4.5V SOT-343

Manufacturer

Infineon Technologies

Datasheet

1.BFP_540_E6327.pdf (10 pages)

Specifications of BFP 540 E6327

Package / Case

SC-70-4, SC-82-4, SOT-323-4, SOT-343

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (max)

Frequency - Transition

30GHz

Noise Figure (db Typ @ F)

0.9dB ~ 1.4dB @ 1.8GHz

Gain

21.5dB

Power - Max

250mW

Dc Current Gain (hfe) (min) @ Ic, Vce

50 @ 20mA, 3.5V

Current - Collector (ic) (max)

80mA

Mounting Type

Surface Mount

Dc Collector/base Gain Hfe Min

50 @ 20mA @ 3.5V

Minimum Operating Temperature

- 65 C

Mounting Style

SMD/SMT

Configuration

Single Dual Emitter

Transistor Polarity

NPN

Maximum Operating Frequency

30000 MHz (Typ)

Collector- Emitter Voltage Vceo Max

4.5 V

Emitter- Base Voltage Vebo

1 V

Continuous Collector Current

0.08 A

Power Dissipation

250 mW

Maximum Operating Temperature

+ 150 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

BFP 540 E6327
BFP540E6327INTR
BFP540E6327XT
SP000012602

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NPN Silicon RF Transistor

• For highest gain low noise amplifier

• Outstanding G

• Gold metallization for high reliability

• SIEGET

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BFP540

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation

Junction temperature

Ambient temperature

Storage temperature

Pb-containing package may be available upon special request

T S is measured on the collector lead at the soldering point to the pcb

at 1.8 GHz

Noise Figure F = 0.9 dB

> 0°C

≤ 0°C

≤ 77°C



45 - Line

= 21.5 dB

Marking

ATs

1=B

2=E

Pin Configuration

3=C

Symbol

CEO

CES

CBO

EBO

tot

stg

4=E

-65 ... 150

Value

250

150

4.5

Package

SOT343

2009-12-04

BFP540

Unit

°C

Related parts for BFP 540 E6327

BFP 540 E6327 Summary of contents

Page 1

NPN Silicon RF Transistor • For highest gain low noise amplifier at 1.8 GHz • Outstanding Noise Figure F = 0.9 dB • Gold metallization for high reliability  • SIEGET 45 - Line • ...

Thermal Resistance Parameter 1) Junction - soldering point Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA GHz C CE Collector-base capacitance MHz ...

Page 4

Simulation Data For SPICE-model as well as for S-parameters including noise parameters refer to our internet website: www.infineon.com/rf.models. and download the latest version before actually starting your design. The simulation data have been generated and verified GHz ...

Page 5

Total power dissipation P tot 300 mW 200 150 100 Permissible Pulse Load ƒ totmax totDC 0.005 0.01 0.02 0.05 0.1 0.2 ...

Page 6

Third order Intercept Point IP =50 Ω ) (Output parameter 1.8GHz CE 30 dBm ...

Page 7

Power gain 20mA Parameter in GHz 0.5 1 1.5 2 2.5 Noise figure ...

Page 8

Source impedance for min. noise figure vs. frequency 5mA / 20mA CE C +j50 +j25 +j10 1.8GHz 2.4GHz 3GHz 100 4GHz 5mA 5GHz -j10 20mA 6GHz -j25 -j50 +j100 0.9GHz -j100 ...

Page 9

Package Outline +0.1 0.3 -0.05 4x 0.1 M Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT343 0.9 ±0.1 2 ±0.2 0.1 MAX. 1.3 0.1 4 ...

Page 10

... For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. ...

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