BFP 540 E6327 Infineon Technologies, BFP 540 E6327 Datasheet - Page 7

• Manufacturer Part Number: BFP 540 E6327
• Description: TRANSISTOR RF NPN 4.5V SOT-343
• Manufacturer: Infineon Technologies

Specifications of BFP 540 E6327

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 30GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.4dB @ 1.8GHz
• Gain: 21.5dB
• Power - Max: 250mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 20mA, 3.5V
• Current - Collector (ic) (max): 80mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50 @ 20mA @ 3.5V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 30000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 0.08 A
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BFP 540 E6327; BFP540E6327INTR; BFP540E6327XT; SP000012602

Power gain G
I
f = Parameter in GHz
Noise figure F = ƒ (I
V
C
CE
= 20mA
dB
dB
= 2V, f = 1.8GHz
2.5
1.5
0.5
30
20
15
10
5
0
4
3
2
1
0
0
0
1
2
3
4
5
6
0.5
10
ma
20
1
, G
1.5
30
ms
C
)
= ƒ (V
40
2
2.5
50
CE
ZS = 50Ohm
ZS = Zsopt
)
60
3
mA
V
V
I
C
CE
80
4
7
Noise figure F = ƒ (I
V
Noise figure F = ƒ (f)
V
CE
CE
dB
dB
= 2V, Z
2.5
1.5
0.5
= 2V, Z
1.5
0.5
4
3
2
1
0
3
2
1
0
0
0
10
S
S
1
= Z
= Z
20
Sopt
Sopt
2
30
C
)
40
3
50
4
2009-12-04
f = 6GHz
f = 5GHz
f = 4GHz
f = 3GHz
f = 2.4GHz
f = 1.8GHz
f = 0.9GHz
IC = 20mA
IC = 5mA
60
BFP540
GHz
mA
I
f
C
80
6