BFP 540 E6327 Infineon Technologies, BFP 540 E6327 Datasheet - Page 6

• Manufacturer Part Number: BFP 540 E6327
• Description: TRANSISTOR RF NPN 4.5V SOT-343
• Manufacturer: Infineon Technologies

Specifications of BFP 540 E6327

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 30GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.4dB @ 1.8GHz
• Gain: 21.5dB
• Power - Max: 250mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 20mA, 3.5V
• Current - Collector (ic) (max): 80mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50 @ 20mA @ 3.5V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 30000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 0.08 A
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BFP 540 E6327; BFP540E6327INTR; BFP540E6327XT; SP000012602

Third order Intercept Point IP
(Output, Z
V
Power gain G
V
f = Parameter in GHz
CE
CE
dBm
dB
= parameter, f = 1.8GHz
= 2V
30
26
24
22
20
18
16
14
12
10
30
20
15
10
8
6
4
2
5
0
0
0
10
S
10
=Z
20
L
20
ma
=50 Ω )
30
, G
30
ms
40
40
= ƒ (I
50
1V
50
60
C
4V
)
60
70
3
2V
1.5V
= ƒ (I
70 mA
80 mA 100
3V
C
I
I
)
C
C
1
2
3
4
5
6
90
6
Transition frequency f
f = 1GHz
V
Power Gain G
|S
V
CE
CE
21
GHz
|² = f (f)
dB
= Parameter in V
= 2V, I
35
25
20
15
10
50
40
35
30
25
20
15
10
5
0
5
0
0
10
C
1
= 20mA
Gms
20
ma
|S21|²
, G
30
2
ms
40
T
= ƒ (f),
3
= ƒ (I
50
Gma
C
60
4
2009-12-04
)
70 mA
GHz
BFP540
I
G
C
4
3
2
1.5
1
0.5
90
6