BFG520W/X,115 NXP Semiconductors, BFG520W/X,115 Datasheet - Page 8

• Manufacturer Part Number: BFG520W/X,115
• Description: TRANS NPN 70MA 15V 9GHZ SOT343N
• Manufacturer: NXP Semiconductors

Specifications of BFG520W/X,115

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 2.1dB @ 900MHz
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Current - Collector (ic) (max): 70mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 20mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.07 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 175 C
• Number Of Elements: 1
• Collector-emitter Voltage: 15V
• Collector-base Voltage: 20V
• Emitter-base Voltage: 2.5V
• Collector Current (dc) (max): 70mA
• Dc Current Gain (min): 60
• Frequency (max): 9GHz
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SO
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1645-2; 934030650115; BFG520W/X T/R

NXP Semiconductors
handbook, halfpage
NPN 9 GHz wideband transistors
V
(dB)
CE
F
= 6 V.
Fig.14 Minimum noise figure as a function of
4
3
1
0
2
10
20 mA
2
I
5 mA
C
=
frequency; typical values.
10
3
f (MHz)
MLB822
10
Rev. 04 - 21 November 2007
4
handbook, halfpage
V
G
(dB)
CE
ass
Fig.15 Associated available gain as a function
= 6 V.
20
15
10
0
5
10
2
of frequency; typical values.
I
C
BFG520W; BFG520W/X
= 5 mA
10
20 mA
3
f (MHz)
Product specification
MLB823
8 of 15
10
4