BFG520W/X,115 NXP Semiconductors, BFG520W/X,115 Datasheet

TRANS NPN 70MA 15V 9GHZ SOT343N

BFG520W/X,115

Manufacturer Part Number
BFG520W/X,115
Description
TRANS NPN 70MA 15V 9GHZ SOT343N
Manufacturer
NXP Semiconductors
Datasheets

Specifications of BFG520W/X,115

Package / Case
SOT-343N
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.1dB ~ 2.1dB @ 900MHz
Power - Max
500mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 20mA, 6V
Current - Collector (ic) (max)
70mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
60 @ 20mA @ 6V
Mounting Style
SMD/SMT
Configuration
Single Dual Emitter
Transistor Polarity
NPN
Maximum Operating Frequency
9000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.07 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 175 C
Number Of Elements
1
Collector-emitter Voltage
15V
Collector-base Voltage
20V
Emitter-base Voltage
2.5V
Collector Current (dc) (max)
70mA
Dc Current Gain (min)
60
Frequency (max)
9GHz
Operating Temp Range
-65C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SO
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1645-2
934030650115
BFG520W/X T/R
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.
http://www.philips.semiconductors.com use http://www.nxp.com
http://www.semiconductors.philips.com use http://www.nxp.com (Internet)
sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com
(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
is replaced with:
- © NXP B.V. (year). All rights reserved. -
If you have any questions related to the data sheet, please contact our nearest sales
office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your
cooperation and understanding,
NXP Semiconductors
BFG520W; BFG520W/X
NPN 9 GHz wideband transistors
Rev. 04 — 21 November 2007
IMPORTANT NOTICE
Product data sheet

Related parts for BFG520W/X,115

BFG520W/X,115 Summary of contents

Page 1

... IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. ...

Page 2

... NXP Semiconductors NPN 9 GHz wideband transistors FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. APPLICATIONS RF front end wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV) and repeater amplifiers in fibre-optic systems ...

Page 3

... NXP Semiconductors NPN 9 GHz wideband transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CES V emitter-base voltage EBO I collector current (DC total power dissipation tot T storage temperature stg T junction temperature j Note the temperature at the soldering point of the collector pin. ...

Page 4

... NXP Semiconductors NPN 9 GHz wideband transistors CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER V collector-base breakdown voltage (BR)CBO V collector-emitter breakdown voltage I (BR)CES V emitter-base breakdown voltage (BR)EBO I collector leakage current CBO h DC current gain FE C feedback capacitance re f transition frequency T G maximum unilateral power gain; ...

Page 5

... NXP Semiconductors NPN 9 GHz wideband transistors 150 handbook, halfpage h FE 100 Fig.3 DC current gain as a function of collector current; typical values. 12 handbook, halfpage f T (GHz GHz amb Fig.5 Transition frequency as a function of collector current; typical values. MLB807 handbook, halfpage C re (pF (mA MHz. ...

Page 6

... NXP Semiconductors NPN 9 GHz wideband transistors 30 handbook, halfpage gain (dB) 20 MSG 900 MHz Fig.6 Gain as a function of collector current; typical values. 50 handbook, halfpage gain G UM (dB) 40 MSG mA Fig.8 Gain as a function of frequency; typical values. MLB810 handbook, halfpage gain (dB) G max G UM ...

Page 7

... NXP Semiconductors NPN 9 GHz wideband transistors 30 handbook, halfpage d im (dB 275 mV 793.25 MHz amb Fig.10 Intermodulation distortion as a function of collector current; typical values. 4 handbook, halfpage F (dB Fig.12 Minimum noise figure as a function of collector current; typical values. MLB818 handbook, halfpage d 2 (dB (mA Fig.11 Second order intermodulation distortion as a ...

Page 8

... NXP Semiconductors NPN 9 GHz wideband transistors 4 handbook, halfpage F (dB Fig.14 Minimum noise figure as a function of frequency; typical values. MLB822 20 handbook, halfpage G ass (dB (MHz Fig.15 Associated available gain as a function Rev November 2007 Product specification BFG520W; BFG520W (MHz) of frequency; typical values. ...

Page 9

... NXP Semiconductors NPN 9 GHz wideband transistors handbook, full pagewidth 180 stability circle f = 900 MHz mA Fig.16 Common emitter noise figure circles; typical values. handbook, full pagewidth o 180 ( 1.85 dB. opt min ( dB. ( 2.5 dB. ( dB. ( 11.8 dB. ms max ( dB. ( dB GHz mA Fig.17 Common emitter noise figure circles; typical values. ...

Page 10

... NXP Semiconductors NPN 9 GHz wideband transistors handbook, full pagewidth o 180 mA Fig.18 Common emitter input reflection coefficient (S handbook, full pagewidth o 180 mA Fig.19 Common emitter forward transmission coefficient ( 135 0.5 0.2 3 GHz 0.2 1 0.5 0 0.2 0.5 o 135 135 40 MHz 3 GHz 135 o 90 Rev November 2007 Product specifi ...

Page 11

... NXP Semiconductors NPN 9 GHz wideband transistors handbook, full pagewidth o 180 mA Fig.20 Common emitter reverse transmission coefficient (S handbook, full pagewidth o 180 mA Fig.21 Common emitter output reflection coefficient ( 135 40 MHz 0.25 0.20 0.15 0.10 0.05 o 135 135 0.5 0.2 0 GHz 0.2 ...

Page 12

... NXP Semiconductors NPN 9 GHz wideband transistors SPICE parameters for the BFG520W die SEQUENCE No. PARAMETER VAF 5 IKF 6 ISE VAR 11 IKR 12 ISC IRB 16 RBM (1) 19 XTB ( (1) 21 XTI 22 CJE 23 VJE 24 MJE XTF 27 VTF 28 ITF 29 PTF 30 CJC 31 VJC 32 MJC 33 XCJC 34 TR (1) 35 CJS SEQUENCE No. ...

Page 13

... NXP Semiconductors NPN 9 GHz wideband transistors PACKAGE OUTLINE Plastic surface mounted package; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.4 0.7 mm 0.1 0.3 0.8 0.5 OUTLINE VERSION IEC SOT343N scale 0.25 2.2 1.35 1.3 1.15 0.10 1.8 1.15 REFERENCES ...

Page 14

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 15

... NXP Semiconductors Revision history Revision history Document ID Release date BFG520W_N_4 20071121 • Modifications: Page 2; text in Pinning table changed BFG520W_X_3 19981002 BFG520W_2 19950824 BFG520W_1 19940829 BFG520W; BFG520W/X Data sheet status Change notice Product data sheet - Product specification - Product specification ...

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