BFG520W/X,115 NXP Semiconductors, BFG520W/X,115 Datasheet - Page 11

TRANS NPN 70MA 15V 9GHZ SOT343N

BFG520W/X,115

Manufacturer Part Number
BFG520W/X,115
Description
TRANS NPN 70MA 15V 9GHZ SOT343N
Manufacturer
NXP Semiconductors
Datasheets

Specifications of BFG520W/X,115

Package / Case
SOT-343N
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.1dB ~ 2.1dB @ 900MHz
Power - Max
500mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 20mA, 6V
Current - Collector (ic) (max)
70mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
60 @ 20mA @ 6V
Mounting Style
SMD/SMT
Configuration
Single Dual Emitter
Transistor Polarity
NPN
Maximum Operating Frequency
9000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.07 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 175 C
Number Of Elements
1
Collector-emitter Voltage
15V
Collector-base Voltage
20V
Emitter-base Voltage
2.5V
Collector Current (dc) (max)
70mA
Dc Current Gain (min)
60
Frequency (max)
9GHz
Operating Temp Range
-65C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SO
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1645-2
934030650115
BFG520W/X T/R
NXP Semiconductors
handbook, full pagewidth
handbook, full pagewidth
NPN 9 GHz wideband transistors
V
V
CE
CE
= 6 V; I
= 6 V; I
C
C
= 20 mA.
= 20 mA; Z
Fig.20 Common emitter reverse transmission coefficient (S
o
Fig.21 Common emitter output reflection coefficient (S
= 50
180
180
o
o
0.25
0
135
135
0.2
0.20
0.2
135
135
o
o
o
o
0.2
0.15
0.5
0.5
Rev. 04 - 21 November 2007
0.10
0.5
0.05
90
90
1
90
1
1
90
3 GHz
o
o
o
o
40 MHz
2
3 GHz
2
2
40 MHz
5
22
45
45
45
45
BFG520W; BFG520W/X
); typical values.
o
12
o
5
5
o
o
); typical values.
MLB817
MLB816
0
0
o
o
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
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