BFG520W/X,115 NXP Semiconductors, BFG520W/X,115 Datasheet - Page 2

• Manufacturer Part Number: BFG520W/X,115
• Description: TRANS NPN 70MA 15V 9GHZ SOT343N
• Manufacturer: NXP Semiconductors

Specifications of BFG520W/X,115

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 2.1dB @ 900MHz
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Current - Collector (ic) (max): 70mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 20mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.07 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 175 C
• Number Of Elements: 1
• Collector-emitter Voltage: 15V
• Collector-base Voltage: 20V
• Emitter-base Voltage: 2.5V
• Collector Current (dc) (max): 70mA
• Dc Current Gain (min): 60
• Frequency (max): 9GHz
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SO
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1645-2; 934030650115; BFG520W/X T/R

NXP Semiconductors
FEATURES
APPLICATIONS
RF front end wideband applications in the GHz range,
such as analog and digital cellular telephones, cordless
telephones (CT2, CT3, PCN, DECT, etc.), radar detectors,
pagers, satellite television tuners (SATV) and repeater
amplifiers in fibre-optic systems.
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT343N plastic package.
MARKING
QUICK REFERENCE DATA
BFG520W
BFG520W/X
V
V
I
P
h
C
f
G
|S
F
TYPE NUMBER
SYMBOL
C
T
FE
High power gain
Low noise figure
High transition frequency
Gold metallization ensures excellent reliability.
CBO
CES
tot
re
NPN 9 GHz wideband transistors
UM
21
|
2
collector-base voltage
collector-emitter voltage R
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
insertion power gain
noise figure
PARAMETER
CODE
N3
N4
open emitter
T
I
I
I
I
I
C
C
C
C
C
s
s
BE
= 20 mA; V
= 0; V
= 20 mA; V
= 20 mA; V
= 20 mA; V
= 0
85 C
opt
Rev. 04 - 21 November 2007
; I
CB
C
= 6 V; f = 1 MHz
= 5 mA; V
CE
CE
CE
CE
= 6 V
= 6 V; f = 1 GHz; T
= 6 V; f = 900 MHz; T
= 6 V; f = 900 MHz; T
CONDITIONS
CE
PINNING
handbook, halfpage
= 6 V; f = 900 MHz
PIN
1
2
3
4
Fig.1 Simplified outline SOT343N.
amb
amb
amb
collector
base
emitter
emitter
= 25 C
BFG520W; BFG520W/X
= 25 C
= 25 C 16
BFG520W
4
1
Top view
DESCRIPTION
60
MIN.
Product specification
3
2
MBK523
120
0.35
9
17
17
1.1
TYP. MAX. UNIT
collector
emitter
base
emitter
BFG520W/X
20
15
70
500
250
1.6
2 of 15
V
V
mA
mW
pF
GHz
dB
dB
dB