BFG520W/X,115 NXP Semiconductors, BFG520W/X,115 Datasheet - Page 4

• Manufacturer Part Number: BFG520W/X,115
• Description: TRANS NPN 70MA 15V 9GHZ SOT343N
• Manufacturer: NXP Semiconductors

Specifications of BFG520W/X,115

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 2.1dB @ 900MHz
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Current - Collector (ic) (max): 70mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 20mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.07 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 175 C
• Number Of Elements: 1
• Collector-emitter Voltage: 15V
• Collector-base Voltage: 20V
• Emitter-base Voltage: 2.5V
• Collector Current (dc) (max): 70mA
• Dc Current Gain (min): 60
• Frequency (max): 9GHz
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SO
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1645-2; 934030650115; BFG520W/X T/R

NXP Semiconductors
CHARACTERISTICS
T
Notes
1. G
2. I
3. d
4. I
V
V
V
I
h
C
f
G
|S
F
P
ITO
V
d
SYMBOL
j
CBO
T
FE
2
(BR)CBO
(BR)CES
(BR)EBO
L1
o
= 25 C unless otherwise specified.
re
NPN 9 GHz wideband transistors
UM
21
f
f
f
C
p
p
C
p
|
im
2
UM
= 900 MHz; f
= 795.25 MHz; f
= 250 MHz; f
= 20 mA; V
= 20 mA; V
= 60 dB (DIN45004B); I
is the maximum unilateral power gain, assuming S
collector-base breakdown voltage
collector-emitter breakdown voltage I
emitter-base breakdown voltage
collector leakage current
DC current gain
feedback capacitance
transition frequency
maximum unilateral power gain;
note 1
insertion power gain
noise figure
output power at 1 dB gain
compression
third order intercept point
output voltage
second order intermodulation
distortion
CE
CE
q
q
= 6 V; R
= 902 MHz; measured at 2f
= 6 V; V
= 560 MHz; measured at f
q
PARAMETER
= 803.25 MHz; f
o
L
= 75 mV; R
= 50 ; T
C
= 20 mA; V
r
amb
= 805.25 MHz; measured at f
L
= 75 ; T
= 25 C;
CE
p
Rev. 04 - 21 November 2007
p
+ f
= 6 V; V
I
I
V
I
I
see Fig.4
I
T
I
T
I
T
I
T
f = 900 MHz
f = 900 MHz
f = 2 GHz
I
R
note 2
note 3
note 4
C
C
E
C
C
C
C
C
C
C
q
f
s
s
s
CB
amb
amb
amb
amb
L
q
= 10 A; I
= 810 MHz.
=10 A; I
= 10 A; R
= 20 mA; V
= 0; V
= 20 mA; V
= 20 mA; V
= 20 mA; V
= 20 mA; V
= 20 mA; V
amb
= 50 ; T
= 898 MHz and 2f
= 6 V; I
= 25 C; see Fig.5
= 25 C
= 25 C
= 25 C
opt
opt
opt
p
= 25 C;
= V
; I
; I
; I
CB
12
C
C
C
CONDITIONS
= 6 V; f = 1 MHz;
o
E
E
is zero.
= 5 mA; V
= 20 mA; V
= 5 mA; V
C
; V
amb
BE
= 0
= 0
CE
CE
CE
CE
CE
CE
= 0
q
= 0
= 6 V; f = 900 MHz;
= 6 V; f = 900 MHz;
= 6 V; f = 900 MHz;
= 25 C
= 6 V; see Fig.3
= 6 V; f = 1 GHz;
= 6 V; f = 2 GHz;
= V
G
p
o
UM
q
+ f
CE
CE
6 dB; V
CE
q
f
= 6 V;
= 6 V;
=
p
= 6 V;
= 904 MHz.
10
f
r
BFG520W; BFG520W/X
= 793.25 MHz.
r
log
= V
-------------------------------------------------------------- dB.
o
1
–
20
15
2.5
60
16
6 dB; R
MIN.
S
11
S
2
21
L
120
0.35
9
17
11
17
1.1
1.6
1.85
17
26
275
TYP.
50
= 75 ;
1
Product specification
2
–
S
22
50
250
1.6
2.1
MAX.
2
4 of 15
V
V
V
nA
pF
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
mV
dB
UNIT