BFG520W/X,115 NXP Semiconductors, BFG520W/X,115 Datasheet - Page 7

• Manufacturer Part Number: BFG520W/X,115
• Description: TRANS NPN 70MA 15V 9GHZ SOT343N
• Manufacturer: NXP Semiconductors

Specifications of BFG520W/X,115

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 2.1dB @ 900MHz
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Current - Collector (ic) (max): 70mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 20mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.07 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 175 C
• Number Of Elements: 1
• Collector-emitter Voltage: 15V
• Collector-base Voltage: 20V
• Emitter-base Voltage: 2.5V
• Collector Current (dc) (max): 70mA
• Dc Current Gain (min): 60
• Frequency (max): 9GHz
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SO
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1645-2; 934030650115; BFG520W/X T/R

NXP Semiconductors
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistors
V
V
R
d im
(dB)
CE
(dB)
o
L
F
= 275 mV; f
Fig.10 Intermodulation distortion as a function
= 75 ; T
= 6 V.
30
40
50
60
70
Fig.12 Minimum noise figure as a function
4
3
1
0
2
1
0
amb
of collector current; typical values.
p
of collector current; typical values.
+ f
= 25 C.
q
10
f
r
= 793.25 MHz; V
20
10
CE
f = 2000 MHz
I
C
= 6 V;
1000 MHz
30
(mA)
900 MHz
500 MHz
I
C
MLB820
(mA)
MLB818
10
Rev. 04 - 21 November 2007
40
2
handbook, halfpage
handbook, halfpage
V
Fig.11 Second order intermodulation distortion as a
G
(dB)
V
R
CE
(dB)
o
L
ass
d 2
Fig.13 Associated available gain as a function
= 75 mV; f
= 75
= 6 V.
10
20
15
5
0
30
40
50
60
70
1
0
function of collector current; typical values.
T
amb
of collector current; typical values.
p
+ f
= 25 C.
q
= 810 MHz; V
BFG520W; BFG520W/X
10
CE
10
20
= 6 V;
I
C
Product specification
f = 900 MHz
(mA)
30
1000 MHz
2000 MHz
I
C
MLB821
(mA)
MLB819
7 of 15
10
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