BFG410W,115 NXP Semiconductors, BFG410W,115 Datasheet - Page 7

• Manufacturer Part Number: BFG410W,115
• Description: TRANS NPN 4.5V 22GHZ SOT343R
• Manufacturer: NXP Semiconductors

Specifications of BFG410W,115

• Package / Case: SOT-343R
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 22GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.2dB @ 900MHz ~ 2GHz
• Gain: 21dB
• Power - Max: 54mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 10mA, 2V
• Current - Collector (ic) (max): 12mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 50 @ 10mA @ 2V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 22000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 0.012 A
• Power Dissipation: 54 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1980-2; 934047460115; BFG410W T/R

NXP Semiconductors
1998 Mar 11
handbook, full pagewidth
handbook, full pagewidth
NPN 22 GHz wideband transistor
I
I
C
C
= 10 mA; V
= 10 mA; V
CE
CE
= 2 V.
= 2 V.
Fig.10 Common emitter forward transmission coefficient (S
Fig.11 Common emitter reverse transmission coefficient (S
180°
180°
0.1
50
−135°
−135°
0.08
135°
40
135°
40 MHz
0.06
30
0.04
20
0.02
10
40 MHz
−90°
−90°
90°
90°
7
3 GHz
3 GHz
−45°
−45°
45°
45°
21
12
MGG726
); typical values.
); typical values.
MGG725
0°
0°
Product specification
BFG410W