BFG410W,115 NXP Semiconductors, BFG410W,115 Datasheet - Page 5

• Manufacturer Part Number: BFG410W,115
• Description: TRANS NPN 4.5V 22GHZ SOT343R
• Manufacturer: NXP Semiconductors

Specifications of BFG410W,115

• Package / Case: SOT-343R
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 22GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.2dB @ 900MHz ~ 2GHz
• Gain: 21dB
• Power - Max: 54mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 10mA, 2V
• Current - Collector (ic) (max): 12mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 50 @ 10mA @ 2V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 22000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 0.012 A
• Power Dissipation: 54 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1980-2; 934047460115; BFG410W T/R

NXP Semiconductors
1998 Mar 11
handbook, halfpage
handbook, halfpage
NPN 22 GHz wideband transistor
(1) V
(2) V
(3) V
Fig.3
(GHz)
V
Fig.5
CE
f T
h FE
120
100
= 2 V; f = 2 GHz; T
80
60
40
20
25
20
15
10
CE
CE
CE
0
5
0
0
1
= 3 V.
= 2 V.
= 1 V.
DC current gain as a function of collector
Transition frequency as a function of
current; typical values.
collector current; typical values.
4
amb
= 25 C.
10
8
I C (mA)
12
I C (mA)
MGG717
MGG719
(1)
(2)
(3)
10
16
2
5
handbook, halfpage
handbook, halfpage
Fig.4
V
Fig.6
I
MSG
C
(dB)
CE
C re
(fF)
= 0; f = 1 MHz.
100
= 2 V; f = 900 MHz.
80
60
40
20
30
20
10
0
0
0
0
Feedback capacitance as a function of
collector-base voltage; typical values.
Maximum stable gain as a function of
collector current; typical values.
1
4
2
8
3
Product specification
12
BFG410W
4
I C (mA)
V CB (V)
MGG718
MGG720
16
5