BFG410W,115 NXP Semiconductors, BFG410W,115 Datasheet - Page 4

• Manufacturer Part Number: BFG410W,115
• Description: TRANS NPN 4.5V 22GHZ SOT343R
• Manufacturer: NXP Semiconductors

Specifications of BFG410W,115

• Package / Case: SOT-343R
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 22GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.2dB @ 900MHz ~ 2GHz
• Gain: 21dB
• Power - Max: 54mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 10mA, 2V
• Current - Collector (ic) (max): 12mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 50 @ 10mA @ 2V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 22000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 0.012 A
• Power Dissipation: 54 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1980-2; 934047460115; BFG410W T/R

NXP Semiconductors
CHARACTERISTICS
T
Notes
1. G
2. Z
1998 Mar 11
V
V
V
I
h
C
C
C
f
G
F
P
ITO
SYMBOL
j
CBO
T
S
FE
= 25 C unless otherwise specified.
(BR)CBO
(BR)CEO
(BR)EBO
L1
NPN 22 GHz wideband transistor
c
e
re
max
21
S
max
2
is optimized for noise; Z
is the maximum power gain, if K > 1. If K < 1 then G
collector-base breakdown voltage
collector-emitter breakdown
voltage
emitter-base breakdown voltage
collector-base leakage current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum power gain; note 1
insertion power gain
noise figure
output power at 1 dB gain
compression
third order intercept point
PARAMETER
L
is optimized for gain.
I
I
I
I
I
I
I
I
I
I
I
see Fig.4
T
T
T
I
f = 900 MHz; 
I

I
Z
I
Z
C
C
E
E
C
E
C
C
C
C
C
C
C
C
C
amb
amb
amb
S
S
S
= 2.5 A; I
= 0; V
= i
= 2.5 A; I
= 1 mA; I
= 10 mA; V
= i
= 0; V
= 10 mA; V
= 10 mA; V
= 10 mA; V
= 1 mA; V
= 1 mA; V
= 10 mA; V
= 10 mA; V
= 
= Z
= Z
e
c
= 25 C; see Fig.5
= 25 C; see Figs 7 and 8
= 25 C; see Fig.8
= 0; V
= 0; V
opt
S opt
S opt
CB
CB
; see Fig.13
4
CONDITIONS
; Z
; Z
= 4.5 V
= 2 V; f = 1 MHz;
B
max
CB
EB
CE
CE
C
E
L
L
= 0
CE
CE
CE
CE
CE
CE
= 0
= 0
= Z
= Z
S
= 2 V; f = 1 MHz
= 0.5 V; f = 1 MHz
= 2 V;
= 2 V; f = 2 GHz;
= MSG; see Figs 6, 7 and 8.
= 
= 2 V; see Fig.3
= 2 V; f = 2 GHz;
= 2 V; f = 2 GHz;
= 2 V; f = 2 GHz;
= 2 V; f = 2 GHz;
= 2 V; f = 2 GHz;
L opt
L opt
opt
; note 2
; note 2
; see Fig.13
10
4.5
1

50










MIN.




80
220
400
45
22
21
18
0.9
1.2
5
15
TYP.
Product specification
BFG410W



15
120










MAX.
V
V
V
nA
fF
fF
fF
GHz
dB
dB
dB
dB
dBm
dBm
UNIT