BFG410W,115 NXP Semiconductors, BFG410W,115 Datasheet

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DATA SHEET BFG410W NPN 22 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 DISCRETE SEMICONDUCTORS 1998 Mar 11 ...

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... NXP Semiconductors NPN 22 GHz wideband transistor FEATURES  Very high power gain  Low noise figure  High transition frequency  Emitter is thermal lead  Low feedback capacitance. APPLICATIONS  RF front end  Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.)  ...

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... NXP Semiconductors NPN 22 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC total power dissipation tot T storage temperature stg T operating junction temperature j Note 1 ...

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... NXP Semiconductors NPN 22 GHz wideband transistor CHARACTERISTICS = 25 C unless otherwise specified SYMBOL PARAMETER V collector-base breakdown voltage (BR)CBO V collector-emitter breakdown (BR)CEO voltage V emitter-base breakdown voltage (BR)EBO I collector-base leakage current CBO h DC current gain FE C collector capacitance c C emitter capacitance e C feedback capacitance ...

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... NXP Semiconductors NPN 22 GHz wideband transistor 120 handbook, halfpage h FE 100 ( ( ( Fig.3 DC current gain as a function of collector current; typical values. 25 handbook, halfpage f T (GHz  GHz amb Fig.5 Transition frequency as a function of collector current; typical values. 1998 Mar 11 MGG717 100 handbook, halfpage ...

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... NXP Semiconductors NPN 22 GHz wideband transistor 30 handbook, halfpage gain (dB) MSG GHz. CE Fig.7 Gain as a function of collector current; typical values. handbook, full pagewidth 180°  mA Fig.9 Common emitter input reflection coefficient (S 1998 Mar 11 MGG721 handbook, halfpage gain (dB) G max 12 16 ...

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... NXP Semiconductors NPN 22 GHz wideband transistor handbook, full pagewidth 180° mA Fig.10 Common emitter forward transmission coefficient (S handbook, full pagewidth 180° mA Fig.11 Common emitter reverse transmission coefficient (S 1998 Mar 11 90° 135° 3 GHz 40 MHz −135° −90° 90° ...

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... NXP Semiconductors NPN 22 GHz wideband transistor handbook, full pagewidth 180°  mA Fig.12 Common emitter output reflection coefficient (S Noise data typical values min  (MHz) (mA) (dB) 900 1 0.8 0.73 2 0.9 0.58 4 1.1 0.40 6 1.3 0.28 8 1.5 0.20 10 1.7 0.14 12 1.9 ...

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... NXP Semiconductors NPN 22 GHz wideband transistor SPICE parameters for the BFG410W die SEQUENCE No. PARAMETER VALUE VAF 5 IKF 6 ISE VAR 11 IKR 12 ISC IRB 16 RBM (1) 19 XTB ( (1) 21 XTI 22 CJE 23 VJE 24 MJE XTF 27 VTF 28 ITF 29 PTF 30 CJC 31 VJC 32 MJC 33 XCJC ( (1) 35 CJS (1) 36 ...

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... NXP Semiconductors NPN 22 GHz wideband transistor PACKAGE OUTLINE Plastic surface-mounted package; reverse pinning; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 0.4 0.7 1.1 mm 0.1 0.8 0.3 0.5 OUTLINE VERSION IEC SOT343R 1998 Mar scale 0.25 2.2 1.35 1.3 1.15 0.10 1 ...

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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...

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... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

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... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...