BFG410W,115 NXP Semiconductors, BFG410W,115 Datasheet - Page 13

TRANS NPN 4.5V 22GHZ SOT343R

BFG410W,115

Manufacturer Part Number
BFG410W,115
Description
TRANS NPN 4.5V 22GHZ SOT343R
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFG410W,115

Package / Case
SOT-343R
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
4.5V
Frequency - Transition
22GHz
Noise Figure (db Typ @ F)
0.9dB ~ 1.2dB @ 900MHz ~ 2GHz
Gain
21dB
Power - Max
54mW
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 10mA, 2V
Current - Collector (ic) (max)
12mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
50 @ 10mA @ 2V
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
22000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
4.5 V
Emitter- Base Voltage Vebo
1 V
Continuous Collector Current
0.012 A
Power Dissipation
54 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1980-2
934047460115
BFG410W T/R
Printed in The Netherlands
© NXP B.V. 2010
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NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
R77/04/pp 13
Date of release: 1998 Mar 11

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