BFG410W,115 NXP Semiconductors, BFG410W,115 Datasheet - Page 6

• Manufacturer Part Number: BFG410W,115
• Description: TRANS NPN 4.5V 22GHZ SOT343R
• Manufacturer: NXP Semiconductors

Specifications of BFG410W,115

• Package / Case: SOT-343R
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 22GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.2dB @ 900MHz ~ 2GHz
• Gain: 21dB
• Power - Max: 54mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 10mA, 2V
• Current - Collector (ic) (max): 12mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 50 @ 10mA @ 2V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 22000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 0.012 A
• Power Dissipation: 54 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1980-2; 934047460115; BFG410W T/R

NXP Semiconductors
1998 Mar 11
handbook, halfpage
handbook, full pagewidth
NPN 22 GHz wideband transistor
V
Fig.7
I
C
CE
gain
(dB)
= 10 mA; V
= 2 V; f = 2 GHz.
30
20
10
0
0
Gain as a function of collector current;
typical values.
CE
= 2 V; Z
4
o
= 50 
Fig.9 Common emitter input reflection coefficient (S
MSG
8
180°
0
−135°
135°
12
0.2
0.2
I C (mA)
G max
0.2
MGG721
0.5
0.5
16
0.5
3 GHz
−90°
90°
6
1
1
1
handbook, halfpage
I
Fig.8
C
gain
(dB)
= 10 mA; V
2
50
40
30
20
10
0
10
40 MHz
Gain as a function of frequency;
typical values.
2
2
CE
5
11
= 2 V.
); typical values.
−45°
45°
5
5
10
MGG724
S 21
2
MSG
0°
1.0
0.8
0.6
0.4
0.2
0
1.0
10
3
Product specification
BFG410W
f (MHz)
MGG722
10
4