MPSH10 Fairchild Semiconductor, MPSH10 Datasheet - Page 5

• Manufacturer Part Number: MPSH10
• Description: TRANSISTOR NPN RF VHF/UHF TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of MPSH10

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 25V
• Frequency - Transition: 650MHz
• Power - Max: 350mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 4mA, 10V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 650 MHz (Min)
• Collector- Emitter Voltage Vceo Max: 25 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 60 @ 4mA @ 10V
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MPSH10FS

Common Emitter Y Parameters vs. Frequency
24
20
16
12
-20
-40
-60
60
40
20
8
4
0
100
0
100
Forward Transfer Admittance
I
V
C
CE
= 2 mA
= 10V
Input Admittance
200
f - FREQUENCY (MHz)
g
200
f - FREQUENCY (MHz)
fe
b
fe
500
500
V
I
g
C
CE
= 2 mA
ie
b
= 10V
ie
1000
1000
6
5
4
3
2
1
0
1.2
0.8
0.6
0.4
0.2
100
1
0
100
Reverse Transfer Admittance
V
V
I
I
C
CE
CE
C
= 2 mA
= 2 mA
= 10V
= 10V
Output Admittance
200
f - FREQUENCY (MHz)
200
f - FREQUENCY (MHz)
-b
re
-g
NPN RF Transistor
re
500
500
g
b
oe
oe
(continued)
1000
1000