MPSH10 Fairchild Semiconductor, MPSH10 Datasheet - Page 3

• Manufacturer Part Number: MPSH10
• Description: TRANSISTOR NPN RF VHF/UHF TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of MPSH10

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 25V
• Frequency - Transition: 650MHz
• Power - Max: 350mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 4mA, 10V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 650 MHz (Min)
• Collector- Emitter Voltage Vceo Max: 25 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 60 @ 4mA @ 10V
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MPSH10FS

Typical Characteristics
100
0.1
10
80
60
40
20
0.9
0.8
0.7
0.6
0.5
0.4
0.3
1
0
0.1
1
25
0.1
Voltage vs Collector Current
V
Typical Pulsed Current Gain
CE
V
0.2
CB
Base-Emitter Saturation
vs Ambient Temperature
Collector-Cutoff Current
= 5V
= 10
= 30V
I
T - AMBIENT TEMPERATURE ( C)
vs Collector Current
125 °C
C
I - COLLECTOR CURRENT (mA)
50
- 40 °C
25 °C
- 40 °C
C
A
- COLLECTOR CURRENT (mA)
0.5
1
75
25 °C
1
2
125 °C
100
5
10
125
°
10
20
20
150
50
0.8
0.6
0.4
0.2
350
300
250
200
150
100
0.15
0.05
50
0.2
0.1
1
0.01
0
0
0.1
SOT-23
V
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector-Emitter Saturation
CE
- 40 °C
= 5V
25
I
Ambient Temperature
= 10
I
Power Dissipation vs
C
C
Collector Current
0.1
- COLLECTOR CURRENT (mA)
- COLLECTOR CURRENT (mA)
- 40 °C
TEMPERATURE ( C)
50
25 °C
1
NPN RF Transistor
75
25 °C
1
TO-92
100
o
125 °C
125 °C
10
125
10
(continued)
150
20
100