BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 90

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

Small-signal discretes
BISS RETs (new)
Low-V
90
Package
Size (mm)
Configuration
Configuration
Package
P
tot
Polarity
max
I
C
NPN
NPN
NPN
NPN
PNP
PNP
PNP
PNP
F
max (A)
0.5
1.0
2.0
2.0
3.0
0.5
1.0
2.0
2.0
3.0
(MEGA) Schottky rectifiers / Low V
I
C
800
800
800
800
800
800
800
800
V
(mA)
CEO
Transistor
15
40
40
40
40
15
40
40
40
40
max (V)
V
CEO
50
50
50
50
50
50
50
50
(V)
R
CEsat
(mΩ)
500
220
190
190
130
500
340
280
280
135
CEsat
max
R1 = R2
R1 = R2
R1 = R2
R1 = R2
R1 ≠ R2
R1 ≠ R2
R1 ≠ R2
R1 ≠ R2
(BISS) transistor modules
I
F
max (A)
0.5
0.5
1
1
1
1
1
1
1
1
R1 (kΩ)
2.2
2.2
2.2
2.2
1
1
1
1
Schottky rectifier
V
R
max (V)
20
20
20
40
40
20
20
20
40
40
R2 (kΩ)
2.2
2.2
10
10
10
10
1
1
V
F
max (mV)
390
550
550
640
500
390
550
550
640
500
PBRN123EK
PBRN113ZK
PBRN123YK
SOT346 (SC-59A)
250 mW
PMEM4030NS
PMEM4030PS
4.9 x 3.9 x 1.75
SOT96 (SO8)
1000 mW
NPN
PNP
PBRN123ET
PBRN113ZT
PBRN123YT
PMEM4010ND
PMEM4020ND
PMEM4020AND
PMEM4010PD
PMEM4020PD
PMEM4020APD
250 mW
SOT23
SOT457 (SC-74)
2.9 x 1.5 x 1.0
500 mW
NPN
PNP
P
tot
PBRN113ES
PBRN123ES
PBRN113ZS
PBRN123YS
PBRP113ES
PBRP123ES
PBRP113ZS
PBRP123YS
PMEM1505NG
PMEM1505PG
SOT54 (TO-92)
SOT353 (SC-88A)
2.1 x 1.25 x 0.95
500 mW
250 mW
NPN
PNP