BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 60

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

RF
Wideband transistors [RF small signal] (continued)
These are NXP preferred types only. For a complete overview of our portfolio please visit: www.nxp.com/rftransistors
60
G
Product
BFR520
BFR520T
BFR540
BFS505
BFS520
BFS540
PRF949
BFG310W/XR
BFG310/XR
BFG325W/XR
BFG325/XR
BFG480W
BFG410W
BFG424F
BFG424W
BFG425W
UM
= Maximum Unilateral Gain
Curve
4, 5
4, 5
4, 5
4, 5
20
20
21
19
20
21
29
26
27
27
27
Package
SOT23
SOT416
SOT23
SOT323
SOT323
SOT323
SOT416
SOT343XR
SOT143XR
SOT343XR
SOT143XR
SOT343
SOT343
SOT343F
SOT343
SOT343
(GHz)
Typ
14
14
14
14
21
22
25
25
25
f
9
9
9
9
9
9
9
T
V ceo
4.5
4.5
4.5
4.5
4.5
(V)
15
15
15
15
15
15
10
6
6
6
6
Maximum values
(mA)
120
120
250
70
70
18
70
50
10
10
35
35
12
30
30
30
I c
(mW)
300
150
500
150
300
500
150
210
210
360
135
135
135
P
60
60
54
tot
Polarity
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
18.3
18.3
G
(dB)
15
15
14
17
15
14
16
18
18
UM
(dB)
1.1
1.1
1.3
1.2
1.1
1.3
1.5
1.0
1.0
1.1
1.1
1.2
0.9
0.8
0.8
0.8
NF
(MHz)
1000
1000
1000
3000
3000
900
900
900
900
900
900
900
900
900
900
900
@
G
(dB)
10
16
10
21
23
22
20
9
9
7
9
8
UM
(dB)
1.9
1.9
2.1
1.9
1.9
2.1
2.1
1.8
1.2
1.2
1.2
1.2
NF
(MHz)
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
@
(mV)
550
V o
(dBm)
1.8
1.8
8.7
8.7
17
17
21
17
21
20
12
12
12
PI
4
5
(dBm)
19.4
19.4
ITO
8.5
8.5
26
26
34
10
26
34
28
15
22
22
22
@ I c &
(mA)
20
20
40
20
40
15
15
80
10
25
25
25
5
5
5
V ce
(V)
6
6
8
6
6
8
3
3
3
3
2
2
2
2
2