BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 58

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

RF
Wideband linear mixer
MMIC: low-noise wideband amplifiers
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5
(1)
(1)
Product
BGA2022
Product
BGA2001
BGA2003
BGA2011
BGA2012
Gain = G
MSG
(2)
Adjustable bias
C
conversion gain
Package
SOT343R
SOT343R
SOT363
SOT363
Package
SOT363
(3)
|S
21
|
2
2.5
2.5
VS
(V)
3
3
VS
(V)
3
@
Is (mA)
10
15
@
4
7
(2)
(mA)
Is
6
(dB)
1.3
1.8
1.5
NF
800-2500
RF input
range
@ 900 MHz
freq
Gain
19
(dB)
22
24
(1)
(1)
(3)
50-500
ouput
range
freq
(dBm)
IF
–7.4
–6.5
IIP3
10
(dB)
(dB)
NF
NF
1.3
1.8
1.7
9
@ 1800 MHz
@ 880 MHz
19.5
Gain
Gain
(dB)
16
16
(dB)
5
(1)
(3)
(1)
(1)
(dBm)
–4.5
–4.8
IIP3
10
(dBm)
OIP3
4
100 MHz
20
26
24
22
(dB)
NF
9
GHz
17.1
18.6
14.8
18.2
1.0
Gain
@ 2450 MHz
Gain
(dB)
(3)
6
(dB) @
2.6 GHz
(1)
11.6
11.1
11.6
8
(dBm)
OIP3
10
3.0 GHz
10.7
10.7
10.5
6.5
(V)
Vs
4
4.5
4.5
4.5
4.5
Vs
(V)
Limits
(mA)
Is (mA)
Limits
10
Is
30
30
30
15
Ptot (mW)
(mW)
Ptot
135
135
135
40
70