BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 74

IC BASESTATION FINAL SOT502B

BLF6G10LS-135R,112

Manufacturer Part Number
BLF6G10LS-135R,112
Description
IC BASESTATION FINAL SOT502B
Manufacturer
NXP Semiconductors

Specifications of BLF6G10LS-135R,112

Package / Case
SOT502B
Transistor Type
LDMOS
Frequency
871.5MHz
Gain
21dB
Voltage - Rated
65V
Current Rating
32A
Current - Test
950mA
Voltage - Test
28V
Power - Output
26.5W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
32 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
26.5W(Typ)
Power Gain (typ)@vds
21@28VdB
Frequency (min)
869MHz
Frequency (max)
894MHz
Package Type
LDMOST
Pin Count
3
Forward Transconductance (typ)
13S
Drain Source Resistance (max)
100(Typ)@6.15Vmohm
Reverse Capacitance (typ)
2@28VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
28%
Mounting
Surface Mount
Mode Of Operation
2-Carrier W-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
934061247112
BLF6G10LS-135R
BLF6G10LS-135R
RF
1-GHz basestations (continued)
74
Product
BLF6G21-6
BLF3G21-30
BLF3G21-6
BLF1046
BLF1822-10
BLF1043
BGF802-20
BGF844
BGF944
Package
SOT538A
SOT467C
SOT538A
SOT467C
SOT467C
SOT538A
SOT365C
SOT365C
SOT365C
Mode of operation
CW
2-Tone
PHS class A
2-Tone
PHS class A
CW
CW
CW
CW
CDMA
CW
EDGE
CW
EDGE
800-4000
HF - 2200
HF - 2200
HF - 1000
HF - 2200
HF - 1000
869 - 894
869 - 894
920 - 960
2.5
2.5
30
50
12
10
25
23
17
6
9
6
2
3
TBD
13.5
13.5
18.5
16
16
16
13
30
30
30
10
35
20
35
20
60
40
55
50
18
50
16
50
16
-45
-26
-23
-48
-69
-65
-65
-75
-75
0.4
0.4
TBD
1.60
1.87
10
5
9

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