BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 26

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

Audio amplifiers
Class-D audio amplifiers
Class-AB audio amplifiers
6
Product
TDA1517(P)
TDA1517ATW
TDA2614
TDA2615
TDA2616
Product
TDA8920BTH
TDA8920BJ
TDA8922BTH
TDA8922BJ
TDA8931T
TDA8932T
TDA8933T
TFA9810T
Description
2 x 6 W
mini SMD
2x3 W
6 W HIFI
2 x 6 W
HIFI
2 x 12 W
HIFI
Description
One chip
2x50..100 W
One chip
2x50..100 W
One chip
2x25..50 W
One chip
2x25..50 W
Pow comp
1x20 W
Dolby
compliant
One-Chip
2x15..25 W
One-Chip
2x10 W
Pow stage
2x10 W
Output
stage
SE
SE/BTL 6.0 - 18
SE
SE
SE
Output
stage
SE/BTL
SE/BTL
SE/BTL
SE/BTL
SE
SE
SE
BTL
Vp (V)
8.5 - 18
15-42
7.5 - 21
7.5 - 21
Vp (V)
±12.5..30
±12.5..30
±12.5..30
±12.5..30
12..34
(OVP 27 V)
10..36
10..36
8..20
Po (W) 10%
THD
2x6 W
(4 Ω,14.4 V)
2x3 W
(8 Ω,14.4 V)
8.5 W
(±12 V, 8 Ω)
8 W
(±12 V, 8 Ω)
15 W
(±16 V, 8 Ω)
Po (W) 10% THD
2x90 (4 Ω, ±27 V)
2x90 (4 Ω, ±27 V)
2x50 (6 Ω, ±26 V)
2x50 (6 Ω, ±26 V)
1x16 W (4 Ω, 22 V)
1x15 W (8 Ω, 29 V)
2x16 W (4 Ω, 22 V)
2x15 W (8 Ω, 29 V)
2x7 W (4 Ω, 15 V)
2x10 W (8 Ω, 24 V)
2x9 W (8 Ω,12 V)
2x12 W (8 Ω, 14 V)
DC Vol
THD
1 kHz
0.10%
0.10%
0.15%
0.15%
0.15%
THD
1 kHz
0.014%
0.02%
0.02%
0.02%
0.02%
0.01%
0.01%
0.08%
Iq (mA)
@ Vp typ
40
40
20
40
40
Iq (mA)
@ Vp typ
50
50
50
50
22
30
30
35
Gain
(dB)
26/20
20
30
30
30
Gain
(dB)
30/36
30/36
30/36
30/36
20
30
30
20
SVRR
(dB)
>48
>50
45
60
60
SVRR
(dB)
55
55
55
55
55
55
55
45
X-talk
(dB)
>40
>40
70
70
X-talk
(dB)
75
75
75
75
75
80
80
70
DC offset
(mV)
<150
DC offset
(mV)
<150
<150
<150
<150
<20
Vnoise (μV)
(20 - 20 kHz)
50/70
Vnoise (μV)
AES17-brick
50
70
70
70
210
210
210
210
128
100
100
200
Rth j-c
(k/W)
>52
2.5
37
8
6
Rth j-c
(k/W)
1.3
1.3
15
44
44
44
2
2
Mute Package
•
•
•
•
•
Mute
SIL9MPF
HDIP18
HTSSOP20 Inv. phase
SIL9MPF
SIL9MPF
SIL9P
•
•
•
•
•
•
•
Package
HSOP24
SIL23P
HSOP24
SIL23P
SO20L
SO32L
SO32L
SO32L
Continued next page
Remarks
Equal phase
Sym. supply
Sym. supply
Sym. supply
Remarks
Eff=90%
Eff=90%
Eff=90%
Eff=90%
Eff=90%,
Rail-to-rail
Eff=92%
Eff=90%
Eff=90%