FDMB506P Fairchild Semiconductor, FDMB506P Datasheet - Page 4

• Manufacturer Part Number: FDMB506P
• Description: MOSFET P-CH 20V 6.8A 8MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMB506P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 6.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.8A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2960pF @ 10V
• Power - Max: 1.9W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, MicroFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
50
40
30
20
10
1
50
40
30
20
10
0
Figure 3. On-Resistance Variation with
-50
0
Figure 1. On-Region Characteristics.
0
0.5
Figure 5. Transfer Characteristics.
V
V
V
GS
-3.5V
I
D
GS
DS
=-4.5V
= -6.8A
-25
= -4.5V
= -5V
1
1
-V
-V
T
DS
0
J
GS
, JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
Temperature.
, GATE TO SOURCE VOLTAGE (V)
-3.0V
25
1.5
2
50
-2.5V
T
A
= -55
2
3
75
o
C
-2.0V
-1.8V
o
100
C)
2.5
125
4
o
125
C
25
o
C
150
3
5
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.01
100
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.1
2.4
2.2
1.8
1.6
1.4
1.2
0.8
10
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
1
2
1
0
0
1
V
Drain Current and Gate Voltage.
V
GS
GS
T
=0V
A
=-1.8V
= 25
1.5
0.2
Gate-to-Source Voltage.
-V
-2.0V
o
T
C
10
SD
A
-V
= 125
, BODY DIODE FORWARD VOLTAGE (V)
2
GS
0.4
, GATE TO SOURCE VOLTAGE (V)
T
-2.5V
o
-I
A
C
D
25
= 125
, DRAIN CURRENT (A)
2.5
o
C
20
0.6
o
C
-55
-3.0V
3
o
C
0.8
30
3.5
-3.5V
1
4
FDMB506P Rev C2(W)
40
I
D
= -3.4A
1.2
4.5
-4.5V
50
5
1.4