FDMB506P Fairchild Semiconductor, FDMB506P Datasheet - Page 2

• Manufacturer Part Number: FDMB506P
• Description: MOSFET P-CH 20V 6.8A 8MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMB506P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 6.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.8A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2960pF @ 10V
• Power - Max: 1.9W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, MicroFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Symbol
Off Characteristics
BV
∆BV
I
I
On Characteristics
V
∆V
R
g
Dynamic Characteristics
C
C
Switching Characteristics
t
t
t
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
Q
C
t
Q
t
DSS
GSS
r
d(off)
f
S
d(on)
rr
FS
GS(th)
DS(on)
oss
rss
SD
∆T
∆T
gs
gd
rr
iss
g
GS(th)
DSS
Notes:
1. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
DSS
J
J
the drain pins. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
θJC
is guaranteed by design while R
Parameter
(Note 2)
(Note 2)
a)
65°C/W when
mounted on a 1in
of 2 oz copper
θCA
is determined by the user's board design.
V
I
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
I
d
D
D
T
F
GS
DS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
iF
A
= –250 µA, Referenced to 25°C
= –250 µA, Referenced to 25°C
= –6.8 A,
/d
= 25°C unless otherwise noted
= –4.5 V, I
= –16 V,
= V
= –5 V,
= –10 V,
= –10 V,
= 0 V,
= ± 8 V,
= –4.5 V, I
= –2.5 V, I
= –1.8 V, I
= –10 V,
= –4.5 V, R
= –4.5 V
= 0 V,
t
= 100 A/µs
2
pad
GS
,
Test Conditions
D
I
V
V
I
= –6.8 A, T
I
V
I
I
I
D
D
D
D
D
D
D
D
S
GS
DS
GEN
GS
= –250 µA
= –250 µA
= –6.8 A
= –2.5 A
= –1.8 A
= –6.8 A
= –1 A,
= –6.8 A,
= –0.8 A
= 0 V
= 0 V
= 0 V,
= 6 Ω
(Note 2)
J
=125°C
b)
Min Typ Max
Scale 1 : 1 on letter size paper
–0.4
–20
208°C/W when mounted
on a minimum pad of 2 oz
copper
–0.7
2216
–0.6
–13
351
167
175
3.5
4.5
25
30
40
36
26
14
80
21
26
12
3
8
FDMB506P Rev C2(W)
±100
2960
–1.5
–1.2
470
260
280
128
1.6
–1
30
38
70
44
25
16
30
48
22
Units
mV/°C
mV/°C
mΩ
µA
nA
nC
nC
nC
pF
pF
ns
ns
ns
nC
nS
pF
ns
V
V
S
A
V