FDAF69N25 Fairchild Semiconductor, FDAF69N25 Datasheet - Page 4

• Manufacturer Part Number: FDAF69N25
• Description: MOSFET N-CH 250V 34A TO-3PF
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDAF69N25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 41 mOhm @ 17A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 34A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 4640pF @ 25V
• Power - Max: 115W
• Mounting Type: Through Hole
• Package / Case: TO-3PF-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDAF69N25 Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
10
1.2
1.1
1.0
0.9
0.8
10
10
10
-100
-1
2
1
0
10
0
Operation in This Area
is Limited by R
vs. Temperature
-50
DS(on)
T
V
J
, Junction Temperature [
DS
, Drain-Source Voltage [V]
0
10
1
1 0
1 0
1 0
-1
-2
0
1 0
50
1. T
2. T
3. Single Pulse
DC
-5
Notes :
Figure 11. Transient Thermal Response Curve
100 ms
D = 0 .5
C
J
0 .0 1
= 150
0 .0 5
0 .0 2
= 25
0 .2
0 .1
10 ms
o
C
o
C
100
1 ms
°
1 0
C]
100
10
* Notes :
-4
1. V
2. I
2
t
µ
D
1
GS
10
s
= 250
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
150
s in g le p u ls e
= 0 V
µ
s
µ
A
1 0
-3
200
(Continued)
4
1 0
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
-2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
40
30
20
10
0
-100
25
P
1 . Z
2 . D u ty F a c to r, D = t
3 . T
1 0
DM
N o te s :
-1
vs. Temperature
θ J C
J M
vs. Case Temperature
(t) = 1 .0 8
- T
-50
C
50
t
= P
1
t
2
D M
T
℃
1 0
T
* Z
J
, Junction Temperature [
/W M a x.
C
1
0
, Case Temperature [ ]
θ J C
/t
0
2
(t)
75
50
1 0
1
100
100
°
C]
125
* Notes :
1. V
2. I
150
www.fairchildsemi.com
D
GS
= 17 A
= 10 V
150
200