FDAF69N25 Fairchild Semiconductor, FDAF69N25 Datasheet - Page 2

• Manufacturer Part Number: FDAF69N25
• Description: MOSFET N-CH 250V 34A TO-3PF
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDAF69N25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 41 mOhm @ 17A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 34A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 4640pF @ 25V
• Power - Max: 115W
• Mounting Type: Through Hole
• Package / Case: TO-3PF-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDAF69N25 Rev. A
Package Marking and Ordering Information
Electrical Characteristics
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.64mH, I
3. I
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Off Characteristics
BV
∆BV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Device Marking
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
FS
GS(th)
SD
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS
∆T
≤ 34A, di/dt ≤ 200A/µs, V
FDAF69N25
DSS
J
AS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 69A, V
DD
= 50V, R
DD
≤ BV
Parameter
FDAF69N25
Device
DSS
G
= 25Ω, Starting T
, Starting T
J
= 25°C
T
C
J
= 25°C unless otherwise noted
= 25°C
Package
TO-3PF
V
I
V
V
V
V
V
V
V
V
f = 1.0MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= 250µA, Referenced to 25°C
/dt =100A/µs
= 25Ω
= 250V, V
= 200V, T
= V
= 40V, I
= 25V, V
= 200V, I
= 0V, I
= 30V, V
= -30V, V
= 10V, I
= 125V, I
= 10V
= 0V, I
= 0V, I
GS
2
, I
D
S
S
D
D
D
Conditions
= 34A
= 69A
= 250µA
DS
GS
D
D
DS
C
= 17A
GS
= 17A
= 250µA
= 69A
= 69A
Reel Size
= 125°C
= 0V
= 0V,
= 0V
= 0V
--
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Tape Width
Min.
--
250
3.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ.
0.034
3570
0.25
750
855
130
220
210
5.7
25
84
95
77
24
37
--
--
--
--
--
--
--
--
--
Quantity
Max Units
0.041
4640
1720
-100
www.fairchildsemi.com
100
980
130
200
270
450
100
136
5.0
1.4
10
34
--
--
--
--
1
--
--
--
30
V/°C
nC
nC
nC
µC
µA
µA
nA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
Ω
S
A
A
V