NDC632P Fairchild Semiconductor, NDC632P Datasheet - Page 6

• Manufacturer Part Number: NDC632P
• Description: MOSFET P-CH 20V 2.7A SSOT-6
• Manufacturer: Fairchild Semiconductor

Specifications of NDC632P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 140 mOhm @ 2.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 550pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDC632P

Typical Electrical and Thermal Characteristics
0.005
1 2
1 0
2.5
1.5
8
6
4
2
0
Figure 13. Transconductance Variation with
0.05
0.02
0.01
3
2
1
0.5
0.2
0.1
0.00001
0
0
Figure 15. Maximum Steady-State Drain Current
1
V
1c
DS
1 b
=- 5V
Drain Current and Temperature
versus Copper Mounting Pad Area.
D = 0.5
0.2
-3
0.2
0.1
2oz COPPER MOUNTING PAD AREA (in
0.05
0.02
0.01
0.0001
Single Pulse
I
D
Figure 17. Transient Thermal Response Curve
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
, DRAIN CURRENT (A)
-6
0.4
depending on the circuit board design.
T = -55°C
J
-9
0.6
0.001
4.5"x5" FR-4 Board
T
Still Air
V
A
G S
= 2 5 C
= -4.5V
25°C
.
o
125°C
-12
2
0.8
)
0.01
-15
1 a
1
t , TIME (sec)
1
(continued)
Figure 14. SuperSOT
0.05
0.02
0.01
0.5
0.2
0.1
1.5
0.5
2 0
1 0
5
2
1
2
1
0
Figure 16. Maximum Safe Operating. Area
0.1
0.1
0
1c
R
Dissipation versus Copper Mounting Pad Area.
1 b
SINGLE PULSE
J A
V
.
T
0.2
= See Note 1c
A
GS
= 25°C
= -4.5V
0.2
2oz COPPER MOUNTING PAD AREA (in
-V
0.5
DS
1
, DRAIN-SOURCE VOLTAGE (V)
TM
0.4
1
-6 Maximum Steady-State Power
P(pk)
2
T - T
Duty Cycle, D = t
R
J
R
JA
0.6
10
t
1
A
JA
(t) = r(t) * R
t
= P * R
2
= See Note 1c
5
4.5"x5" FR-4 Board
T
Still Air
A
= 2 5 C
1 0
2
0.8
JA
1
)
o
/ t
JA
(t)
2
100
NDC632P Rev. B1
2 0
3 0
1a
1
300