NDC632P Fairchild Semiconductor, NDC632P Datasheet
NDC632P
Specifications of NDC632P
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NDC632P Summary of contents
Page 1
... High density cell design for extremely low R Exceptional on-resistance and maximum DC current capability 25°C unless otherwise noted A (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note -4.5V DS(ON 0 -2.7V. DS(ON package design using copper . DS(ON NDC632P -20 -8 -2.7 -10 1.6 1 0.8 -55 to 150 78 30 June1996 Units °C °C/W °C/W NDC632P Rev. B1 ...
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... A Conditions -250 µ - -250 µ - 1.0 MHz -4 GEN GEN -2 -4 Min Typ Max - -10 J 100 -100 -0.4 -0 125 C -0.3 -0.5 -0.8 J 0.1 0. 125 C 0.145 0.28 J 0.152 0.2 - 550 260 8.7 15 1.7 1.8 NDC632P Rev. B1 Units V µA µ ...
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... C/W when mounted on a 0.003 in pad of 2oz copper. 1a Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. = 25°C unless otherwise noted) A Conditions -1.3 A (Note Min Typ Max Units -1.3 -0.77 -1.2 is guaranteed NDC632P Rev ...
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... V =-2.5V GS -2.7 -3.0 -3.5 -4 DRAIN CURRENT (A) D Figure 2. On-Resistance Variation V =-4 125°C J 25°C -55° - DRAIN CURRENT (A) D Figure 4. On-Resistance Variation -250µ JUNCTION TEMPERATURE (°C) J Figure 6. Gate Threshold Variation . with Temperature -5.0 -15 - NDC632P Rev. B1 ...
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... Figure 10. Gate Charge Characteristics. t d(on OUT Figure 12. Switching Waveforms = 125°C J 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Source Current and Temperature -5V DS -10V GATE CHARGE (nC off t t d(off PULSE WIDTH 1.4 -15V INVERTED NDC632P Rev. B1 ...
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... Figure 16. Maximum Safe Operating. Area 0.001 0.01 0 TIME (sec 4.5"x5" FR-4 Board Still Air 0.2 0.4 0.6 0.8 2 2oz COPPER MOUNTING PAD AREA ( Maximum Steady-State Power = -4. See Note 1c = 25° DRAIN-SOURCE VOLTAGE ( ( See Note 1c JA P(pk ( Duty Cycle 100 300 NDC632P Rev. B1 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...