FDP8443 Fairchild Semiconductor, FDP8443 Datasheet - Page 3
![MOSFET N-CH 40V 80A TO-220AB](/photos/5/61/56185/fdp8443_sml.jpg)
FDP8443
Manufacturer Part Number
FDP8443
Description
MOSFET N-CH 40V 80A TO-220AB
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDP8443.pdf
(7 pages)
Specifications of FDP8443
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.5 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
185nC @ 10V
Input Capacitance (ciss) @ Vds
9310pF @ 25V
Power - Max
188W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0035 Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
20 A
Power Dissipation
188 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDP8443
Manufacturer:
NXP/恩智浦
Quantity:
20 000
FDP8443 Rev. A
Electrical Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: Starting T
2: Pulse width = 100s.
t
t
t
t
t
t
V
t
Q
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
d(on)
d(off)
f
on
r
off
rr
Symbol
SD
rr
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
J
= 25
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
o
C, L = 0.26mH, I
Parameter
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
AS
= 64A.
T
(V
C
GS
= 25
= 10V)
o
C unless otherwise noted
V
V
I
I
I
SD
SD
SD
DD
GS
certification.
= 35A
= 15A
= 35A, dI
= 20V, I
= 10V, R
Test Conditions
3
D
SD
GS
= 35A
/dt = 100A/μs
= 2Ω
Min
-
-
-
-
-
-
-
-
-
-
18.4
17.9
13.5
Typ
0.8
0.8
55
42
48
-
-
www.fairchildsemi.com
1.25
Max
109
1.0
58
55
62
-
-
-
-
Units
nC
ns
ns
ns
ns
ns
ns
ns
V