FDP8442 Fairchild Semiconductor, FDP8442 Datasheet - Page 4

MOSFET N-CH 40V 80A TO-220AB

FDP8442

Manufacturer Part Number
FDP8442
Description
MOSFET N-CH 40V 80A TO-220AB
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDP8442

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.1 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
235nC @ 10V
Input Capacitance (ciss) @ Vds
12200pF @ 25V
Power - Max
254W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.9 m Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
254 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDP8442
Manufacturer:
Fairchild Semiconductor
Quantity:
135
FDP8842 Rev. A
Typical Characteristics
Figure 1. Normalized Power Dissipation vs Case
10000
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1000
100
1E-3
0.01
10
0.1
0
10
2
1
10
-5
V
SINGLE PULSE
-5
GS
D = 0.50
DUTY CYCLE - DESCENDING ORDER
SINGLE PULSE
25
= 10V
0.20
0.10
0.05
0.02
0.01
T
C
, CASE TEMPERATURE
50
Temperature
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
Figure 3.
10
75
10
-4
-4
100
Normalized Maximum Transient Thermal Impedance
125
Figure 4. Peak Current Capability
(
o
C
10
)
10
t, RECTANGULAR PULSE DURATION(s)
t, RECTANGULAR PULSE DURATION(s)
150
-3
-3
175
4
10
Figure 2.
10
-2
-2
300
250
200
150
100
50
0
25
Maximum Continuous Drain Current vs
50
10
Case Temperature
10
-1
T
-1
C
NOTES:
DUTY FACTOR: D = t
PEAK T
, CASE TEMPERATURE
75
CURRENT LIMITED
BY PACKAGE
J
= P
T
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
C
I = I
100
DM
= 25
25
x Z
o
C
10
θJC
10
P
o
0
DM
C DERATE PEAK
1
125
/t
0
x R
175 - T
2
150
www.fairchildsemi.com
θJC
(
t
1
+ T
o
C
V
C
t
150
GS
2
)
C
= 10V
10
175
10
1
1

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