FDP8442 Fairchild Semiconductor, FDP8442 Datasheet - Page 2

• Manufacturer Part Number: FDP8442
• Description: MOSFET N-CH 40V 80A TO-220AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDP8442

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.1 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 235nC @ 10V
• Input Capacitance (ciss) @ Vds: 12200pF @ 25V
• Power - Max: 254W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.9 m Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 254 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP8842 Rev. A
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
B
I
I
V
r
C
C
C
R
Q
Q
Q
Q
Q
V
V
I
E
P
T
R
R
Symbol
DSS
GSS
Symbol
DS(
D
VDSS
GS(th)
iss
oss
rss
G
DSS
GS
AS
D
J
g(TOT)
g(TH)
gs
gs2
gd
θJC
θJA
Device Marking
, T
on)
STG
FDP8442
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (T
Drain Current Continuous (T
Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Derate above 25
Operating and Storage Temperature
Gate to Source Threshold Voltage
Drain to Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Parameter
FDP8442
Device
o
C
C
amb
<158
T
Parameter
J
= 25
TO-220AB
= 25°C unless otherwise noted
Package
T
o
C
C, V
o
= 25°C unless otherwise noted
C, V
GS
GS
V
I
I
T
I
V
V
V
V
f = 1MHz
V
V
V
= 10V)
D
D
D
J
DS
DS
GS
GS
DS
GS
GS
GS
= 80A, V
= 80A, V
= 250µA, V
= 10V, with R
= 175°C
= 0V
= V
= 32V
= 25V, V
= ±20V
= 0.5V, f = 1MHz
= 0 to 10V
= 0 to 2V
Test Conditions
2
GS
Reel Size
, I
GS
GS
Tube
D
GS
GS
= 250µA
= 10V
= 10V,
θJA
= 0V,
= 0V
T
V
I
I
D
g
J
= 62
DD
= 1mA
= 80A
= 150°C
= 20V
(Note 1)
(Note 2)
o
C/W)
Tape Width
N/A
Min
40
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
See Figure 4
-55 to +175
12200
Ratings
1040
Typ
2.9
2.3
3.9
640
181
1.0
23
49
26
41
0.59
±20
720
254
1.7
-
-
-
-
40
80
23
62
www.fairchildsemi.com
±100
Max
250
3.1
5.3
235
Quantity
30
4
50 units
1
-
-
-
-
-
-
-
-
Units
Units
W/
o
o
mΩ
µA
nA
nC
nC
nC
nC
nC
pF
pF
pF
C/W
C/W
mJ
V
o
V
Ω
W
V
V
A
C
o
C