FQB9N50CFTM Fairchild Semiconductor, FQB9N50CFTM Datasheet - Page 4

• Manufacturer Part Number: FQB9N50CFTM
• Description: MOSFET N-CH 500V 9A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: FRFET™r

Specifications of FQB9N50CFTM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 1030pF @ 25V
• Power - Max: 173W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FQB9N50CFTMTR

FQB9N50CF Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
Figure 11. Transient Thermal Response Curve
10
10
10
10
10
-1
-2
2
1
0
10
1.2
1.1
1.0
0.9
0.8
0
-100
vs. Temperature
Operation in This Area
is Limited by R
-50
DS(on)
V
T
J
DS
, Junction Temperature [
10
, Drain-SourceVoltage[V]
0
1
50
DC
10
10
10
100ms
-1
-2
* Notes :
0
10
1. T
2. T
3. Single Pulse
100
-5
10
C
J
D=0.5
0.05
0.02
0.01
10ms
o
= 25
= 150
2
0.1
0.2
C]
※
1. V
2. I
1ms
o
Notes :
C
o
C
D
GS
10
100
= 250 µA
150
= 0 V
-4
single pulse
t
µ
1
10
s
, Square Wave Pulse Duration [sec]
µ
s
10
200
-3
(Continued)
10
3
4
10
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
-2
10
8
6
4
2
0
25
* Notes :
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1. Z
2. Duty Factor, D=t
3. T
10
-100
P
-1
DM
θ
JM
JC
(t) = 0.72
- T
vs. Temperature
C
= P
vs. Case Temperature
t
1
t
DM
2
50
0
10
C/W Max.
-50
* Z
1
0
/t
θ
JC
2
(t)
T
C
T
, Case Temperature [
J
, Junction Temperature [
10
0
75
1
50
100
100
o
C]
o
C]
125
※
1. V
2. I
150
Notes :
www.fairchildsemi.com
D
GS
= 4.5 A
= 10 V
200
150