FQB9N50CFTM Fairchild Semiconductor, FQB9N50CFTM Datasheet - Page 2

• Manufacturer Part Number: FQB9N50CFTM
• Description: MOSFET N-CH 500V 9A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: FRFET™r

Specifications of FQB9N50CFTM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 1030pF @ 25V
• Power - Max: 173W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FQB9N50CFTMTR

FQB9N50CF Rev. A
Package Marking and Ordering Information
Electrical Characteristics
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 8mH, I
3. I
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Off Characteristics
BV
∆BV
∆T
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Device Marking
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
FS
GS(th)
SD
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
J
DSS
FQB9N50CFS
≤ 9A, di/dt ≤ 200A/µs, V
FQB9N50CF
DSS
/
AS
= 9A, V
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
DD
= 50V, R
DD
≤ BV
FQB9N50CFTM_WS
G
FQB9N50CFTM
= 25 Ω, Starting T
DSS,
Parameter
Device
Starting T
J
= 25°C
J
T
= 25°C
C
= 25°C unless otherwise noted
Package
D2-PAK
D2-PAK
V
I
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= 250 µA, Referenced to 25°C
= 25 Ω
/ dt = 100 A/µs
= 500 V, V
= 400 V, T
= V
= 40 V, I
= 25 V, V
= 400 V, I
= 0 V, I
= 30 V, V
= -30 V, V
= 10 V, I
= 250 V, I
= 10 V
= 0 V, I
= 0 V, I
2
Test Conditions
GS
, I
D
S
S
Reel Size
D
D
D
= 9 A
= 9 A,
= 250 µA
DS
GS
D
D
= 250 µA
DS
= 4.5 A
330mm
330mm
GS
C
= 4.5A
= 9A,
= 9A,
= 125°C
= 0 V
= 0 V,
= 0 V
= 0 V
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
Tape Width
24mm
24mm
Min
500
2.0
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Typ
0.57
130
300
790
100
0.7
6.5
24
18
65
93
64
28
15
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4
Max Units
1030
Quantity
-100
0.85
100
100
170
140
195
125
4.0
1.4
www.fairchildsemi.com
36
10
30
45
35
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9
--
800
800
V/°C
µA
µA
nA
nA
pF
nC
nC
nC
nC
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
S
A
A
V