FQA11N90 Fairchild Semiconductor, FQA11N90 Datasheet - Page 3

• Manufacturer Part Number: FQA11N90
• Description: MOSFET N-CH 900V 11.4A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQA11N90

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 960 mOhm @ 5.7A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 11.4A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 94nC @ 10V
• Input Capacitance (ciss) @ Vds: 3500pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQA11N90 / FQA11N90_F109 Rev. A2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation vs.
Figure 5. Capacitance Characteristics
5000
4500
4000
3500
3000
2500
2000
1500
1000
10
10
10
2.0
1.6
1.2
0.8
0.4
500
-1
1
0
10
0
10
0
-1
Top :
Bottom : 5.5 V
-1
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
8
V
V
DS
DS
V
, Drain-Source Voltage [V]
GS
, Drain-Source Voltage [V]
I
10
D
10
= 20V
, Drain Current [A]
0
C
16
C
C
0
iss
oss
rss
V
GS
= 10V
24
C
C
C
iss
oss
rss
※
= C
= C
= C
10
1. 250µ s Pulse Test
2. T
10
Notes :
※
gs
gd
1
ds
1
+ C
C
+ C
Note : T
= 25 ℃
32
※
gd
gd
1. V
2. f = 1 MHz
(C
Notes :
ds
GS
J
= shorted)
= 25 ℃
= 0 V
40
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
10
10
10
10
10
10
-1
1
0
12
10
2
-1
1
0
8
6
4
2
0
0.2
0
Variation vs. Source Current
and Temperatue
10
25
0.4
150
150 ℃
o
C
4
20
o
V
C
V
GS
Q
SD
, Gate-Source Voltage [V]
G
, Source-Drain voltage [V]
, Total Gate Charge [nC]
V
30
DS
0.6
V
= 720V
DS
V
25 ℃
DS
= 450V
6
= 180V
40
-55
o
C
0.8
50
※
1. V
2. 250µ s Pulse Test
※
Notes :
8
1. V
2. 250µ s Pulse Test
Notes :
DS
※
60
= 50V
GS
Note : I
1.0
= 0V
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D
= 11.4 A
70
10
1.2
80