FQA11N90 Fairchild Semiconductor, FQA11N90 Datasheet

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FQA11N90

Manufacturer Part Number
FQA11N90
Description
MOSFET N-CH 900V 11.4A TO-3P
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQA11N90

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
960 mOhm @ 5.7A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
11.4A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
94nC @ 10V
Input Capacitance (ciss) @ Vds
3500pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-3P-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2007 Fairchild Semiconductor Corporation
FQA11N90 / FQA11N90_F109 Rev. A2
FQA11N90 / FQA11N90_F109
900V N-Channel MOSFET
Features
• 11.4A, 900V, R
• Low gate charge ( typical 72 nC)
• Low Crss ( typical 30pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
= 0.96Ω @V
G
D
S
GS
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
= 10 V
C
= 25°C)
Parameter
Parameter
TO-3P
FQA Series
C
C
= 25°C)
= 100°C)
1
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
Typ
0.24
--
--
FQA11N90
-55 to +150
S
1000
D
11.4
45.6
± 30
11.4
2.38
900
300
300
7.2
4.0
30
Max
0.42
40
--
September 2007
QFET
www.fairchildsemi.com
Units
Units
°C/W
°C/W
°C/W
W/°C
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
®

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FQA11N90 Summary of contents

Page 1

... R Thermal Resistance, Case-to-Sink θCS R Thermal Resistance, Junction-to-Ambient θJA ©2007 Fairchild Semiconductor Corporation FQA11N90 / FQA11N90_F109 Rev. A2 Description = 10 V These N-Channel enhancement mode power field effect GS transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... V = 50V ≤ 11.4A, di/dt ≤200A/µs, V ≤ Starting DSS, 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ Essentially independent of operating temperature FQA11N90 / FQA11N90_F109 Rev. A2 Package Reel Size TO-3P -- TO-3PN -- T = 25°C unless otherwise noted C Test Conditions = 250 µ ...

Page 3

... Figure 5. Capacitance Characteristics 5000 4500 C iss 4000 3500 C 3000 oss 2500 2000 C rss 1500 1000 500 Drain-Source Voltage [V] DS FQA11N90 / FQA11N90_F109 Rev. A2 Figure 2. Transfer Characteristics ※ Notes : 1. 250µ s Pulse Test ℃ Figure 4. Body Diode Forward Voltage = 10V Note : ℃ ※ ...

Page 4

... 150 Single Pulse - Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve FQA11N90 / FQA11N90_F109 Rev. A2 (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0 250 µA D 0.0 100 150 200 -100 o C] Figure 10. Maximum Drain Current 12 DS(on µ s 100 µ ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms FQA11N90 / FQA11N90_F109 Rev. A2 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FQA11N90 / FQA11N90_F109 Rev. A2 Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions ±0.10 ø3.20 ±0.20 2.00 ±0.20 3.00 ±0.20 1.00 5.45TYP ±0.30 [5.45 ] FQA11N90 / FQA11N90_F109 Rev. A2 TO-3P ±0.20 15.60 ±0.20 13.60 ±0.20 9.60 5.45TYP ±0.30 [5. ±0.20 4.80 +0.15 1.50 –0.05 ±0.20 1.40 +0.15 0.60 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions FQA11N90 / FQA11N90_F109 Rev. A2 (Continued) TO-3PN 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FQA11N90 / FQA11N90_F109 Rev. A2 Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ PowerTrench i-Lo™ IntelliMAX™ ...

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