HUF76645P3 Fairchild Semiconductor, HUF76645P3 Datasheet - Page 5

• Manufacturer Part Number: HUF76645P3
• Description: MOSFET N-CH 100V 75A TO-220AB
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF76645P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 153nC @ 10V
• Input Capacitance (ciss) @ Vds: 4400pF @ 25V
• Power - Max: 310W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
10000
1200
1000
1000
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
800
600
400
200
100
1.2
1.0
0.8
0.6
0.4
70
0
-80
0.1
0
V
V
GS
GS
JUNCTION TEMPERATURE
= 4.5V, V
= 0V, f = 1MHz
-40
R
GS
V
10
DS
T
, GATE TO SOURCE RESISTANCE ( )
J
, JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
DD
0
= 50V, I
t
f
1
20
40
D
= 62A
t
80
d(OFF)
30
C
V
GS
RSS
C
C
10
(Continued)
= V
OSS
ISS
120
C
DS
t
GD
r
o
C
, I
C)
C
40
GS
D
DS
160
= 250 A
+ C
+ C
t
d(ON)
GD
GD
200
100
50
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
1200
1000
10
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
800
600
400
200
8
6
4
2
0
1.2
1.1
1.0
0.9
0
0
-80
0
V
DD
V
I
GS
D
= 50V
VOLTAGE vs JUNCTION TEMPERATURE
GATE CURRENT
= 250 A
= 10V, V
-40
R
30
GS
10
T
, GATE TO SOURCE RESISTANCE ( )
J
, JUNCTION TEMPERATURE (
DD
Q
0
= 50V, I
g
, GATE CHARGE (nC)
60
20
40
D
= 75A
HUF76645P3, HUF76645S3S Rev. B
80
WAVEFORMS IN
DESCENDING ORDER:
90
30
I
I
I
D
D
D
= 75A
= 50A
= 20A
t
d(OFF)
120
t
o
f
t
120
r
C)
40
160
t
d(ON)
200
150
50