HUF76645P3 Fairchild Semiconductor, HUF76645P3 Datasheet - Page 3

• Manufacturer Part Number: HUF76645P3
• Description: MOSFET N-CH 100V 75A TO-220AB
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF76645P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 153nC @ 10V
• Input Capacitance (ciss) @ Vds: 4400pF @ 25V
• Power - Max: 310W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
2000
1000
1.2
1.0
0.8
0.6
0.4
0.2
100
0.01
0
50
0.1
0
2
1
10
10
-5
-5
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
TEMPERATURE
25
V
GS
T
= 10V
50
C
, CASE TEMPERATURE (
10
SINGLE PULSE
10
75
V
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
-4
-4
GS
= 5V
100
125
o
C)
FIGURE 4. PEAK CURRENT CAPABILITY
10
10
-3
150
-3
t, RECTANGULAR PULSE DURATION (s)
175
t, PULSE WIDTH (s)
10
10
-2
-2
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
80
60
40
20
0
25
CASE TEMPERATURE
50
10
10
-1
-1
T
NOTES:
DUTY FACTOR: D = t
PEAK T
C
, CASE TEMPERATURE (
75
V
J
GS
= P
= 4.5V
DM
100
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
T
C
I = I
x Z
= 25
HUF76645P3, HUF76645S3S Rev. B
25
10
10
V
JC
P
1
GS
o
DM
/t
0
0
C
125
x R
2
o
= 10V
C DERATE PEAK
o
JC
C)
175 - T
t
+ T
150
1
t
150
2
C
C
175
10
10
1
1