FQPF6N90 Fairchild Semiconductor, FQPF6N90 Datasheet - Page 3

• Manufacturer Part Number: FQPF6N90
• Description: MOSFET N-CH 900V 3.4A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF6N90

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.9 Ohm @ 1.7A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 52nC @ 10V
• Input Capacitance (ciss) @ Vds: 1880pF @ 25V
• Power - Max: 56W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

QFET N-CHANNEL
3000
2500
2000
1500
1000
500
10
10
10
10
0
-1
-2
4
3
2
1
0
10
1
0
10
0
-1
-1
Fig 5. Capacitance vs. Drain-Source Voltage
Top :
Bottom : 5.0 V
Fig 3. On-Resistance vs. Drain Current
10.0 V
15.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
GS
Fig 1. Output Characteristics
V
V
5
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
10
10
, Drain Current [A]
0
0
V
C
GS
C
C
¡Ø Note :
oss
iss
rss
1. 250¥ìs Pulse Test
2. T
= 20V
V
10
GS
C
= 25¡É
= 10V
C
C
C
iss
oss
rss
= C
= C
= C
10
10
15
¡Ø Note : T
gs
gd
ds
1
1
+ C
+ C
¡Ø Note ;
gd
gd
1. V
2. F = 1 MHz
(C
ds
GS
J
= 25¡É
= shorted)
= 0 V
20
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
Fig 6. Gate Charge vs. Gate-Source Voltage
-1
1
0
Fig 4. Source-Drain Diode Forward Voltage
1
0
0.2
0
2
5
Fig 2. Transfer Characteristics
150¡É
0.4
150¡É
10
25¡É
4
V
V
Q
GS
SD
G
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
, Total Gate Charge [nC]
15
0.6
25¡É
V
DS
V
20
V
DS
= 720V
DS
= 450V
-55¡É
0.8
= 180V
6
25
1.0
30
¡Ø Note
¡Ø Note :
1. V
2. 250¥ìs Pulse Test
1. V
2. 250¥ìs Pulse Test
¡Ø Note : I
8
DS
GS
35
= 50V
= 0V
1.2
D
= 5.8A
FQPF7N90
40
1.4
10
45
3