FQPF6N90 Fairchild Semiconductor, FQPF6N90 Datasheet - Page 2

• Manufacturer Part Number: FQPF6N90
• Description: MOSFET N-CH 900V 3.4A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF6N90

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.9 Ohm @ 1.7A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 52nC @ 10V
• Input Capacitance (ciss) @ Vds: 1880pF @ 25V
• Power - Max: 56W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQPF6N90
ELECTRICAL CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Notes:
2
Symbol
Symbol
R
BV
V
BV/ T
t
t
Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
L=116mH, I
I
Pulse Test: Pulse Width
Essentially Independent of Operating Temperature
I
I
C
DS(on)
GS(th)
C
C
Q
V
d(on)
d(off)
Q
SD
I
GSS
DSS
Q
Q
g
SM
I
t
oss
t
t
SD
DSS
rss
iss
S
rr
fs
gs
gd
r
f
g
rr
5.8A, di/dt
J
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage, Forward
Gate-Source Leakage, Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain (Miller) Charge
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
AS
=3.4A, V
400A/ s, V
Characteristics
Characteristics
DD
=50V, R
300 s, Duty Cycle
DD
G
BV
=25 , Starting T
DSS
, Starting T
(T
2%
C
= 25 C unless otherwise specified)
Min.
J
J
=25 C
=25 C
Min.
900
3.0
Typ.
400
4.3
1440
Typ.
0.96
140
3.8
8.5
17
35
80
95
55
40
20
Max.
13.6
3.4
1.4
1880
Max.
100
100
185
170
200
120
5.0
1.9
100
10
23
80
52
Units
ns
A
V
C
Units
V/ C
nA
nC
pF
ns
V
V
S
A
Integral reverse pn-diode
in the MOSFET
T
T
di
J
J
F
=25 C, I
=25 C, I
/dt=100A/ s
V
I
V
V
V
V
V
V
V
V
f=1MHz
See Fig 5
V
R
See Fig 13
V
I
See Fig 6 & Fig 12
D
D
GS
DS
GS
GS
DS
DS
GS
DS
GS
DD
DS
G
=250 A,
=5.8A
=50
Test Conditions
=5V, I
=900V
=720V, T
=50V, I
=720V, V
=0V, I
=30V
= 30V
=10V, I
=0V, V
=450V, I
Test Conditions
QFET N-CHANNEL
S
F
=3.4A, V
=5.8A, V
D
D
DS
D
=250 A
D
=250 A
=1.7A
D
=1.7A
C
GS
=25V
=5.8A
See Fig 7
=125 C
=10V
DD
GS
=720V
=0V