HUF75939P3 Fairchild Semiconductor, HUF75939P3 Datasheet - Page 5

• Manufacturer Part Number: HUF75939P3
• Description: MOSFET N-CH 200V 22A TO-220AB
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF75939P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 125 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 152nC @ 20V
• Input Capacitance (ciss) @ Vds: 2200pF @ 25V
• Power - Max: 180W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
Test Circuits and Waveforms
©2001 Fairchild Semiconductor Corporation
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VARY t
REQUIRED PEAK I
0V
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
1.3
1.2
1.1
1.0
0.9
0.8
P
TO OBTAIN
-80
V
t
I
GS
P
D
VOLTAGE vs JUNCTION TEMPERATURE
= 250 A
-40
AS
T
J
, JUNCTION TEMPERATURE (
0
R
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
G
40
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
80
10
8
6
4
2
0
V
I
0
(Continued)
AS
DS
120
V
DUT
DD
0.01
o
C)
L
= 100V
10
160
+
-
V
20
200
DD
Q
g
, GATE CHARGE (nC)
30
40
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
0
WAVEFORMS IN
DESCENDING ORDER:
10000
1000
100
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
10
I
I
D
D
50
0.1
= 22A
= 5A
60
C
OSS
V
DS
I
, DRAIN TO SOURCE VOLTAGE (V)
AS
C
70
DS
1
+ C
t
P
GD
BV
t
HUF75939P3, HUF75939S3ST Rev. B
AV
DSS
10
C
RSS
V
C
GS
ISS
= C
= 0V, f = 1MHz
= C
V
GD
DS
GS
+ C
100
GD
V
DD
200