FQI6N50TU Fairchild Semiconductor, FQI6N50TU Datasheet - Page 7

• Manufacturer Part Number: FQI6N50TU
• Description: MOSFET N-CH 500V 5.5A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI6N50TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.3 Ohm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 790pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Mechanical Dimensions
2
D
- PAK
Dimensions in Millimeters
©2008 Fairchild Semiconductor International
Rev. A1, Oct 2008