FQI6N50TU Fairchild Semiconductor, FQI6N50TU Datasheet - Page 3

• Manufacturer Part Number: FQI6N50TU
• Description: MOSFET N-CH 500V 5.5A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI6N50TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.3 Ohm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 790pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2008 Fairchild Semiconductor International
Typical Characteristics
1400
1200
1000
10
800
600
400
200
10
10
0
-1
5
4
3
2
1
0
10
1
0
10
0
-1
Figure 5. Capacitance Characteristics
-1
Figure 3. On-Resistance Variation vs.
Top :
Bottom :
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
2
15 V
10 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
GS
4
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
10
10
D
6
, Drain Current [A]
0
0
C
C
C
oss
rss
iss
V
8
GS
= 20V
V
GS
10
= 10V
C
C
C
iss
oss
rss
= C
= C

Notes :
= C
10
10
1. 250  s Pulse Test
2. T
12

Note : T
gs
ds
gd
1
1
+ C
+ C
C
= 25 
gd

Notes :
gd
1. V
2. f = 1 MHz
(C
ds
GS
J
14
= shorted)
= 25 
= 0 V
16
10
10
10
10
10
10
12
10
-1
-1
1
0
1
0
0.2
8
6
4
2
0
2
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
0.4
3
Variation vs. Source Current
150

4
25

V
V
6
150

0.6
Q
GS
SD
and Temperature
G
, Source-Drain Voltage [V]
, Gate-Source Voltage [V]
, Total Gate Charge [nC]
25

V
V
DS
9
V
DS
0.8
= 480V
DS
= 300V
= 120V
6
12
-55

1.0

Notes :

Notes :
15
1. V
2. 250  s Pulse Test
1. V
2. 250  s Pulse Test

Note : I
8
DS
GS
1.2
= 50V
= 0V
D
18
= 6.2 A
1.4
Rev. A1, Oct 2008
21
10