FQB5P20TM Fairchild Semiconductor, FQB5P20TM Datasheet - Page 4
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FQB5P20TM
Manufacturer Part Number
FQB5P20TM
Description
MOSFET P-CH 200V 4.8A D2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Specifications of FQB5P20TM
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.4 Ohm @ 2.4A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
4.8A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 10V
Input Capacitance (ciss) @ Vds
430pF @ 25V
Power - Max
3.13W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2000 Fairchild Semiconductor International
Typical Characteristics
10
10
10
10
1.2
1.1
1.0
0.9
0.8
-1
Figure 9. Maximum Safe Operating Area
-100
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
-V
T
vs. Temperature
J
DS
, Junction Temperature [
0
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
※ Notes :
1 0
1 0
1 0
10
1. T
2. T
3. Single Pulse
1
- 1
- 2
1 0
0
C
J
= 150
= 25
- 5
o
D = 0 . 5
0 .0 2
0 .0 5
0 .0 1
C
o
0 .2
0 .1
C
50
DS(on)
DC
Figure 11. Transient Thermal Response Curve
10 ms
100
1 0
(Continued)
o
- 4
1 ms
C]
s in g le p u ls e
10
※ Notes :
1. V
2. I
t
2
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
D
GS
= -250 μ A
100 s
150
= 0 V
1 0
- 3
200
1 0
- 2
2.5
2.0
1.5
1.0
0.5
0.0
5
4
3
2
1
0
-100
25
※ N o te s :
Figure 8. On-Resistance Variation
1 . Z
2 . D u ty F a c t o r , D = t
3 . T
Figure 10. Maximum Drain Current
1 0
- 1
θ J C
J M
P
-50
DM
- T
( t ) = 1 . 6 7 ℃ /W M a x .
50
C
vs. Case Temperature
= P
T
vs. Temperature
D M
J
T
t
, Junction Temperature [
1
C
t
0
, Case Temperature [ ℃ ]
1 0
* Z
2
1
0
θ J C
/t
75
2
( t )
50
100
1 0
1
100
o
C]
※ Notes :
125
1. V
2. I
150
D
GS
= -2.4 A
= -10 V
200
150
Rev. A, May 2000