FQB5P20TM Fairchild Semiconductor, FQB5P20TM Datasheet - Page 2
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FQB5P20TM
Manufacturer Part Number
FQB5P20TM
Description
MOSFET P-CH 200V 4.8A D2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Specifications of FQB5P20TM
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.4 Ohm @ 2.4A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
4.8A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 10V
Input Capacitance (ciss) @ Vds
430pF @ 25V
Power - Max
3.13W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2000 Fairchild Semiconductor International
Elerical Characteristics
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 21.5mH, I
3. I
4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Off Characteristics
BV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
SD
FS
BV
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS
≤ -4.8A, di/dt ≤ 300A/ s, V
DSS
T
J
AS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= -4.8A, V
DD
= -50V, R
DD
Parameter
≤ BV
G
DSS,
= 25
Starting T
Starting T
T
C
= 25°C unless otherwise noted
J
= 25°C
J
= 25°C
V
I
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= -250 A, Referenced to 25°C
/ dt = 100 A/ s
= 25
= -200 V, V
= -160 V, T
= V
= -40 V, I
= -25 V, V
= -160 V, I
= 0 V, I
= -30 V, V
= 30 V, V
= -10 V, I
= -100 V, I
= -10 V
= 0 V, I
= 0 V, I
Test Conditions
GS
, I
D
S
S
D
= -250 A
D
= -4.8 A
= -4.8 A,
D
DS
= -250 A
GS
DS
D
D
C
= -2.4 A
GS
= -2.4 A
= -4.8 A,
= -4.8 A,
= 0 V
= 125°C
= 0 V
= 0 V,
= 0 V
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
-200
Min
-3.0
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-0.17
1.07
Typ
330
175
1.1
2.4
2.8
5.2
75
12
70
12
25
10
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9
-19.2
Max
-100
100
-5.0
430
150
-4.8
-5.0
-10
1.4
98
15
28
35
60
13
-1
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Rev. A, May 2000
Units
V/°C
nC
nC
nC
nA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
A
A
V
A
A
C