FDW6923 Fairchild Semiconductor, FDW6923 Datasheet - Page 4

• Manufacturer Part Number: FDW6923
• Description: MOSFET P-CH 20V 3.5A 8-TSSOP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDW6923

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 3.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1030pF @ 10V
• Power - Max: 1.2W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
5
4
3
2
1
0
Figure 9. Schottky Diode Forward Voltage.
0 .0 0 1
0 .0 1
0
0 .1
Figure 7. Gate Charge Characteristics.
1 0
1
0
0.001
I
D
0.01
= -3.5A
0.1
T
J
0.0001
1
= 1 0 0
0 .2
o
C
3
D = 0.5
Q
V
F
g
0 .4
, GATE CHARGE (nC)
, F O R W A R D V O L T A G E ( V )
0.2
0.1
0.05
0.02
0.01
0.001
T
J
= 2 5
SINGLE PULSE
6
0 .6
o
C
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.
V
DS
= -5V
0 .8
0.01
9
-15V
1
-10V
1 .2
12
0.1
t
1
, TIME (sec)
Figure 10. Schottky Diode Reverse Current.
1800
1500
1200
900
600
300
0
Figure 8. Capacitance Characteristics.
0
0.00000001
0.0000001
1
0.000001
0.00001
0.0001
0.001
0.01
0
C
ISS
-V
DS
5
, DRAIN TO SOURCE VOLTAGE (V)
10
5
C
V
OSS
R
, REV ERSE V OLTA GE (V )
10
T
T
J
P(pk)
C
J
= 125
Duty Cycle, D = t
RSS
= 25
T
R
10
R
J
o
o
JA
100
C
- T
C
JA
(t) = r(t) + R
A
t
= 135 °C/W
1
= P * R
t
2
15
FDW6923 Rev. D1 (W)
15
V
f = 1MHz
JA
1
GS
(t)
JA
/ t
= 0 V
2
1000
20
20