FDW6923 Fairchild Semiconductor, FDW6923 Datasheet

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FDW6923

Manufacturer Part Number
FDW6923
Description
MOSFET P-CH 20V 3.5A 8-TSSOP
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDW6923

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
45 mOhm @ 3.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.5A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
16nC @ 4.5V
Input Capacitance (ciss) @ Vds
1030pF @ 10V
Power - Max
1.2W
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDW6923
Manufacturer:
PERICOM
Quantity:
3 122
Part Number:
FDW6923
Manufacturer:
FRIRGHILD
Quantity:
20 000
FDW6923
P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process.
forward drop Schottky diode which is isolated from the
MOSFET, providing a compact power solution for
asynchronous DC/DC converter applications.
Applications
2008 Fairchild Semiconductor International
MOSFET Absolute Maximum Ratings
Symbol
V
V
I
P
T
Schottky Maximum Ratings
V
I
I
Thermal Characteristics
R
Package Marking and Ordering Information
D
F
FM
DC/DC conversion
J
DSS
GSS
D
RRM
, T
JA
Device Marking
STG
6923
TSSOP-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
MOSFET Power Dissipation (minimum pad)
Schottky Power Dissipation (minimum pad)
Operating and Storage Junction Temperature Range
Repetitive Peak Reverse Voltage
Average Forward Current
Peak Forward Current
Thermal Resistance, Junction-to-Ambient
(minimum pad)
It is combined with a low
– Continuous
– Pulsed
FDW6923
Device
Parameter
Pin 1
Reel Size
13’’
(Note 1)
(Note 1)
(Note 1)
(Note 1)
T
A
Features
=25
–3.5 A, –20 V. R
V
High performance trench technology for extremely
low R
Low profile TSSOP-8 package
o
C unless otherwise noted
F
< 0.55 V @ 1 A
DS(ON)
5
6
7
8
Tape width
MOSFET: 115
Schottky: 130
R
16mm
-55 to +150
DS(ON)
DS(ON)
Ratings
1.2
1.0
1.5
20
30
3.5
20
30
12
= 0.045
= 0.075
@ V
@ V
4
3
2
1
GS
GS
July 2008
FDW6923 Rev. D1(W)
Quantity
= –4.5 V
= –2.5 V
2500 units
Units
C/W
W
V
V
A
V
A
A
C

Related parts for FDW6923

FDW6923 Summary of contents

Page 1

... C unless otherwise noted A Ratings – – 3.5 (Note 1) – 30 1.2 (Note 1) 1.0 (Note 1) -55 to +150 20 1.5 30 MOSFET: 115 Schottky: 130 (Note 1) Reel Size Tape width 13’’ 16mm July 2008 @ V = –4 –2 Units C/W Quantity 2500 units FDW6923 Rev. D1(W) ...

Page 2

... R T =125 = =125 10V R is determined by the user's board design. CA Min Typ Max Units –20 V –16 mV/ C –1 A –100 nA 100 nA –0.6 –1.0 –1 mV –15 A 13.2 S 1030 pF 280 pF 120 9 2.2 nC 2.4 nC –1.25 A –0.6 –1.2 V 100 nA 0 0.48 0.55 V 0.42 0. FDW6923 Rev. D1 (W) ...

Page 3

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = -2.5V -3.0V -3.5V -4.0V -4. DRAIN CURRENT ( -1. 125 2.5 3 3 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDW6923 Rev. D1(W) 5 1.4 ...

Page 4

... Figure 8. Capacitance Characteristics. 0.01 0.001 0.0001 0.00001 0.000001 0.0000001 0.00000001 Figure 10. Schottky Diode Reverse Current. 0.01 0 TIME (sec 1MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE ( 125 REV ERSE V OLTA ( 135 °C/W JA P(pk ( Duty Cycle 100 1000 FDW6923 Rev ...

Page 5

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...

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