RFD3055 Fairchild Semiconductor, RFD3055 Datasheet - Page 6

• Manufacturer Part Number: RFD3055
• Description: MOSFET N-CH 60V 12A IPAK
• Manufacturer: Fairchild Semiconductor

Specifications of RFD3055

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 150 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 20V
• Input Capacitance (ciss) @ Vds: 300pF @ 25V
• Power - Max: 53W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Case: TO-252
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Test Circuits and Waveforms
I
g(REF)
FIGURE 18. GATE CHARGE TEST CIRCUIT
V
GS
V
DS
DUT
R
(Continued)
L
+
-
V
DD
I
V
g(REF)
0
0
DD
V
GS
V
= 2V
GS
FIGURE 19. GATE CHARGE WAVEFORMS
Q
g(TH)
Q
V
g(10)
DS
Q
g(TOT)
RFD3055, RFD3055SM, RFP3055 Rev. B
V
GS
= 10V
V
GS
= 20V