RFD3055 Fairchild Semiconductor, RFD3055 Datasheet - Page 3

• Manufacturer Part Number: RFD3055
• Description: MOSFET N-CH 60V 12A IPAK
• Manufacturer: Fairchild Semiconductor

Specifications of RFD3055

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 150 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 20V
• Input Capacitance (ciss) @ Vds: 300pF @ 25V
• Power - Max: 53W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Case: TO-252
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
0.1
50
10
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
1.2
1.0
0.8
0.6
0.4
0.2
1
0
1
T
T
SINGLE PULSE
0
C
J
0.01
0.1
= MAX RATED
= 25
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
10
TEMPERATURE
o
-5
0.05
0.02
0.01
25
C
0.5
0.2
0.1
V
DS
SINGLE PULSE
, DRAIN TO SOURCE VOLTAGE (V)
T
C
50
, CASE TEMPERATURE (
DS(ON)
75
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
10
-4
100
Unless Otherwise Specified
125
o
C)
10
150
-3
t
1
, RECTANGULAR PULSE DURATION (s)
100µs
10ms
1ms
DC
175
100
10
-2
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
200
100
10
12
10
14
4
8
6
2
0
10
25
V
V
-3
T
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
GS
GS
C
FIGURE 5. PEAK CURRENT CAPABILITY
= 25
= 20V
= 10V
10
CASE TEMPERATURE
o
50
-2
C
10
-1
T
10
C
-1
NOTES:
DUTY FACTOR: D = t
PEAK T
, CASE TEMPERATURE (
75
t, PULSE WIDTH (ms)
FOR TEMPERATURES ABOVE 25
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
10
J
0
= P
100
RFD3055, RFD3055SM, RFP3055 Rev. B
DM
I
P
10
=
10
DM
x Z
0
I
1
25
θJC
*
1
125
/t
2
t
175
---------------------
x R
10
1
o
C)
150
2
θJC
t
–
2
T C
+ T
150
10
C
3
o
10
C
1
175
10
4