FDS6675A Fairchild Semiconductor, FDS6675A Datasheet - Page 3

• Manufacturer Part Number: FDS6675A
• Description: MOSFET P-CH 30V 11A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6675A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 5V
• Input Capacitance (ciss) @ Vds: 2330pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
50
40
30
20
10
50
40
30
20
10
0
1.8
1.6
1.4
1.2
0.8
0.6
0
1
Figure 3. On-Resistance Variation with
0
1
-50
Figure 1. On-Region Characteristics.
V
V
Figure 5. Transfer Characteristics.
GS
DS
-6.0V
= -10V
= -10V
V
I
GS
-25
D
= -11A
1.5
= - 10V
0.5
-V
-V
0
DS
GS
-4.5V
T
, DRAIN TO SOURCE VOLTAGE (V)
J
, GATE TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
Temperature.
2
25
-4.0V
1
50
2.5
75
-3.5V
1.5
T
A
= -55
100
3
-3.0V
o
C
o
C)
125
2
125
3.5
o
C
150
25
o
C
175
2.5
4
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.05
0.04
0.03
0.02
0.01
0.01
100
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
0.1
with Source Current and Temperature.
2.4
2.2
1.8
1.6
1.4
1.2
0.8
10
0
1
2
1
2
0
0
Drain Current and Gate Voltage.
V
T
GS
A
= 25
= 0V
V
GS
Gate-to-Source Voltage.
o
0.2
C
-V
= - 3.5V
10
SD
-V
, BODY DIODE FORWARD VOLTAGE (V)
GS
4
T
, GATE TO SOURCE VOLTAGE (V)
A
T
-4.0V
= 125
A
-I
0.4
D
= 125
, DRAIN CURRENT (A)
o
20
C
o
C
-4.5V
6
0.6
25
o
C
30
-6.0V
0.8
-55
8
o
C
40
FDS6675A Rev C (W)
I
D
= -5.5A
1
-10V
10
50
1.2