FDS6675A Fairchild Semiconductor, FDS6675A Datasheet - Page 2

• Manufacturer Part Number: FDS6675A
• Description: MOSFET P-CH 30V 11A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6675A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 5V
• Input Capacitance (ciss) @ Vds: 2330pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Rg
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
trr
Qrr
Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
DSS
GSS
D(on)
d(on)
r
d(off)
f
S
FS
BV
V
GS(th)
DS(on)
iss
oss
rss
SD
g
gs
gd
the drain pins. R
GS(th)
DSS
T
T
JA
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
JC
is guaranteed by design while R
a) 50°C/W when
mounted on a 1in
pad of 2 oz copper
Parameter
(Note 2)
2
(Note 2)
CA
is determined by the user's board design.
T
A
= 25°C unless otherwise noted
V
I
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
V
I
d
b) 105°C/W when
D
D
F
iF
GS
DS
GS
DS
GS
GS
GS
GS
DS
DS
GS
DD
GS
DS
GS
GS
= –11A
= –250 A, Referenced to 25 C
= –250 A, Referenced to 25 C
/d
mounted on a .04 in
pad of 2 oz copper
= –10 V, I
=15 mV
= 0 V, I
= –24 V, V
= ±25 V,
= V
= –10 V,
= –4.5 V,
= –10 V,
= –5 V,
= –15 V,
= –15 V,
= –10 V,
= –15 V,
= –5 V
= 0 V,
t
= 100A/ s
Test Conditions
GS
, I
D
D
= –250 A
I
= –250 A
D
S
GS
= –11 A, T
= –2.1 A
V
V
I
I
I
V
I
R
I
= 0 V
D
D
D
D
D
DS
2
DS
GEN
GS
= –11 A
= –9 A
= –11 A
= –1 A,
= –11 A,
= 0 V
f= 1.0 MHz
= –5 V
= 0 V,
= 6
J
(Note 2)
=125 C
Min
–30
–50
–1
c) 125°C/W when mounted on a
minimum pad.
Typ Max Units
2330
–1.6
–0.7
–23
610
300
10
15
14
34
14
12
70
37
24
33
15
5
4
6
9
±100
–2.1
–1.2
–10
110
–3
13
19
18
25
22
60
34
FDS6675A Rev C (W)
mV/ C
mV/ C
m
m
pF
pF
pF
nC
nC
nC
nC
nA
ns
ns
ns
ns
ns
V
V
A
S
A
V
A